| Summary: | A solid–state reaction method was used to produce CaCu3-xMgxTi4O12-2xF2x with x values of 0, 0.05, and 0.10. A CaCu3Ti4O12 phase was detected in the absence of impurities. The (Mg2++F–) co–doping ions inhibited the grain growth of the CaCu3Ti4O12 ceramics because of the solute drag mechanism. The dielectric and non–Ohmic electrical properties of the CaCu3-xMgxTi4O12-2xF2x ceramics were studied. Intriguingly, the ceramic with x = 0.05 enhanced the dielectric properties with a considerably decreased loss tangent (tanδ~0.06) while retaining a high dielectric permittivity (>104) at 1 kHz. The nonlinear current density–electric field (J–E) properties of the ceramic with x = 0.05 were also successfully improved. However, the dielectric and nonlinear properties deteriorated when x = 0.10. The variations in the low–frequency tanδ and electric breakdown strength were primarily associated with the grain size and Schottky barrier height at the grain boundaries. The relevant mechanisms for these improved dielectric and non–Ohmic properties are discussed based on the effect of the internal barrier layer capacitor.
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