Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors
A new technique which uses an ultra-thin silicon interlayer in germanium photodetectors for junction engineering is demonstrated. A 5 nm epitaxially grown silicon layer was effective in preventing phosphorus diffusion into bulk Ge at 625 °C. Abrupt junction profile was achieved in thin 250 nm Ge PDs...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4821118 |
| Summary: | A new technique which uses an ultra-thin silicon interlayer in germanium photodetectors for junction engineering is demonstrated. A 5 nm epitaxially grown silicon layer was effective in preventing phosphorus diffusion into bulk Ge at 625 °C. Abrupt junction profile was achieved in thin 250 nm Ge PDs which led to improved bandwidth performance during low voltage operations (at 1V or less). |
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| ISSN: | 2158-3226 |