Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors
A new technique which uses an ultra-thin silicon interlayer in germanium photodetectors for junction engineering is demonstrated. A 5 nm epitaxially grown silicon layer was effective in preventing phosphorus diffusion into bulk Ge at 625 °C. Abrupt junction profile was achieved in thin 250 nm Ge PDs...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4821118 |
| _version_ | 1811234125393166336 |
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| author | Andy Eu-Jin Lim Tsung-Yang Liow Kok Kiong Chen Roger Poh Cher Tern Guo-Qiang Lo |
| author_facet | Andy Eu-Jin Lim Tsung-Yang Liow Kok Kiong Chen Roger Poh Cher Tern Guo-Qiang Lo |
| author_sort | Andy Eu-Jin Lim |
| collection | DOAJ |
| description | A new technique which uses an ultra-thin silicon interlayer in germanium photodetectors for junction engineering is demonstrated. A 5 nm epitaxially grown silicon layer was effective in preventing phosphorus diffusion into bulk Ge at 625 °C. Abrupt junction profile was achieved in thin 250 nm Ge PDs which led to improved bandwidth performance during low voltage operations (at 1V or less). |
| first_indexed | 2024-04-12T11:31:24Z |
| format | Article |
| id | doaj.art-a9dd55820d974c469e27ce3c697bacd4 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-12T11:31:24Z |
| publishDate | 2013-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-a9dd55820d974c469e27ce3c697bacd42022-12-22T03:35:01ZengAIP Publishing LLCAIP Advances2158-32262013-09-0139092106092106-510.1063/1.4821118008309ADVNovel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectorsAndy Eu-Jin Lim0Tsung-Yang Liow1Kok Kiong Chen2Roger Poh Cher Tern3Guo-Qiang Lo4Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore Science Park II, Singapore 117685, SingaporeInstitute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore Science Park II, Singapore 117685, SingaporeInstitute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore Science Park II, Singapore 117685, SingaporeInstitute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore Science Park II, Singapore 117685, SingaporeInstitute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore Science Park II, Singapore 117685, SingaporeA new technique which uses an ultra-thin silicon interlayer in germanium photodetectors for junction engineering is demonstrated. A 5 nm epitaxially grown silicon layer was effective in preventing phosphorus diffusion into bulk Ge at 625 °C. Abrupt junction profile was achieved in thin 250 nm Ge PDs which led to improved bandwidth performance during low voltage operations (at 1V or less).http://dx.doi.org/10.1063/1.4821118 |
| spellingShingle | Andy Eu-Jin Lim Tsung-Yang Liow Kok Kiong Chen Roger Poh Cher Tern Guo-Qiang Lo Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors AIP Advances |
| title | Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors |
| title_full | Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors |
| title_fullStr | Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors |
| title_full_unstemmed | Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors |
| title_short | Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors |
| title_sort | novel epitaxial silicon interlayer for junction engineering in aggressively scaled germanium photodetectors |
| url | http://dx.doi.org/10.1063/1.4821118 |
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