Design and Research of Wireless Passive High-Temperature Sensor Based on SIW Resonance
The temperature of advanced components in aviation and aerospace fields is difficult to obtain timely. In this study, we aimed to investigate microwave backscattering technology combined with the theory of substrate integrated waveguide and resonant cavity to design a wireless passive temperature se...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-06-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/7/1035 |
| _version_ | 1827604956545286144 |
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| author | Fujia Xu Shujing Su Lili Zhang Ting Ren |
| author_facet | Fujia Xu Shujing Su Lili Zhang Ting Ren |
| author_sort | Fujia Xu |
| collection | DOAJ |
| description | The temperature of advanced components in aviation and aerospace fields is difficult to obtain timely. In this study, we aimed to investigate microwave backscattering technology combined with the theory of substrate integrated waveguide and resonant cavity to design a wireless passive temperature sensor and explore its potential in this field. We employed silicon carbide and aluminum ceramic as the substrate to make sensors. The interrogation antenna was designed to test the sensor, which could completely cover the working frequency of the sensor and had good radiation characteristics. Based on the test results, the silicon carbide sensor was capable of bearing a temperature limit of about 1000 °C compared to the alumina sensor. From 25 °C to 500 °C, its sensitivity was 73.68 kHz/°C. Furthermore, the sensitivity was 440 kHz/°C in the range of 501 °C to 1000 °C. Moreover, we observed the surface of this sensor by using the scanning electron microscope, and the results showed that the damage to the sensor surface film structure caused by long-term high temperature is the major reason for the failure of the sensor. In conclusion, the performance of the silicon carbide sensor is superior to the alumina sensor. |
| first_indexed | 2024-03-09T06:11:49Z |
| format | Article |
| id | doaj.art-aa0873a87d3743479cb5c95ce4c5d3cb |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T06:11:49Z |
| publishDate | 2022-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-aa0873a87d3743479cb5c95ce4c5d3cb2023-12-03T11:57:40ZengMDPI AGMicromachines2072-666X2022-06-01137103510.3390/mi13071035Design and Research of Wireless Passive High-Temperature Sensor Based on SIW ResonanceFujia Xu0Shujing Su1Lili Zhang2Ting Ren3State Key Laboratory of Dynamic Measurement Technology, School of Instrument and Electronics, North University of China, No.3 Xueyuan Road, Taiyuan 030051, ChinaState Key Laboratory of Dynamic Measurement Technology, School of Instrument and Electronics, North University of China, No.3 Xueyuan Road, Taiyuan 030051, ChinaState Key Laboratory of Dynamic Measurement Technology, School of Instrument and Electronics, North University of China, No.3 Xueyuan Road, Taiyuan 030051, ChinaState Key Laboratory of Dynamic Measurement Technology, School of Instrument and Electronics, North University of China, No.3 Xueyuan Road, Taiyuan 030051, ChinaThe temperature of advanced components in aviation and aerospace fields is difficult to obtain timely. In this study, we aimed to investigate microwave backscattering technology combined with the theory of substrate integrated waveguide and resonant cavity to design a wireless passive temperature sensor and explore its potential in this field. We employed silicon carbide and aluminum ceramic as the substrate to make sensors. The interrogation antenna was designed to test the sensor, which could completely cover the working frequency of the sensor and had good radiation characteristics. Based on the test results, the silicon carbide sensor was capable of bearing a temperature limit of about 1000 °C compared to the alumina sensor. From 25 °C to 500 °C, its sensitivity was 73.68 kHz/°C. Furthermore, the sensitivity was 440 kHz/°C in the range of 501 °C to 1000 °C. Moreover, we observed the surface of this sensor by using the scanning electron microscope, and the results showed that the damage to the sensor surface film structure caused by long-term high temperature is the major reason for the failure of the sensor. In conclusion, the performance of the silicon carbide sensor is superior to the alumina sensor.https://www.mdpi.com/2072-666X/13/7/1035substrate integrated waveguideresonant cavitysilicon carbidehigh temperature sensorwireless passive |
| spellingShingle | Fujia Xu Shujing Su Lili Zhang Ting Ren Design and Research of Wireless Passive High-Temperature Sensor Based on SIW Resonance Micromachines substrate integrated waveguide resonant cavity silicon carbide high temperature sensor wireless passive |
| title | Design and Research of Wireless Passive High-Temperature Sensor Based on SIW Resonance |
| title_full | Design and Research of Wireless Passive High-Temperature Sensor Based on SIW Resonance |
| title_fullStr | Design and Research of Wireless Passive High-Temperature Sensor Based on SIW Resonance |
| title_full_unstemmed | Design and Research of Wireless Passive High-Temperature Sensor Based on SIW Resonance |
| title_short | Design and Research of Wireless Passive High-Temperature Sensor Based on SIW Resonance |
| title_sort | design and research of wireless passive high temperature sensor based on siw resonance |
| topic | substrate integrated waveguide resonant cavity silicon carbide high temperature sensor wireless passive |
| url | https://www.mdpi.com/2072-666X/13/7/1035 |
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