Growth of crystalline phase change materials by physical deposition methods
Phase change materials are a technologically important materials class and are used for data storage in rewritable DVDs and in phase change random access memory. Furthermore, new applications for phase change materials are emerging. Phase change materials with a high structural quality, such as offe...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2017-05-01
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| Series: | Advances in Physics: X |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/23746149.2017.1346483 |
| _version_ | 1818412544604241920 |
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| author | Jos E. Boschker Raffaella Calarco |
| author_facet | Jos E. Boschker Raffaella Calarco |
| author_sort | Jos E. Boschker |
| collection | DOAJ |
| description | Phase change materials are a technologically important materials class and are used for data storage in rewritable DVDs and in phase change random access memory. Furthermore, new applications for phase change materials are emerging. Phase change materials with a high structural quality, such as offered by epitaxial films, are needed in order to study the fundamental properties of phase change materials and to improve our understanding of this materials class. Here, we review the progress made in the growth of crystalline phase change materials by physical methods, such as molecular beam epitaxy, sputtering, and pulsed laser deposition. First, we discuss the difference and similarities between these physical deposition methods and the crystal structures of Ge2Sb2Te5, the prototype phase change material. Next, we focus on the growth of epitiaxial GST films on (0 0 1)- and (1 1 1)-oriented substrates, leading to the conclusion that (1 1 1)-oriented substrates are preferred for the growth of phase change materials. Finally, the growth of GeTe/Sb2Te3 superlattices on amorphous and single crystalline substrates is discussed. |
| first_indexed | 2024-12-14T10:49:00Z |
| format | Article |
| id | doaj.art-aa22e52f8c644dcc91efcf289f037a5a |
| institution | Directory Open Access Journal |
| issn | 2374-6149 |
| language | English |
| last_indexed | 2024-12-14T10:49:00Z |
| publishDate | 2017-05-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Advances in Physics: X |
| spelling | doaj.art-aa22e52f8c644dcc91efcf289f037a5a2022-12-21T23:05:20ZengTaylor & Francis GroupAdvances in Physics: X2374-61492017-05-012367569410.1080/23746149.2017.13464831346483Growth of crystalline phase change materials by physical deposition methodsJos E. Boschker0Raffaella Calarco1Paul-Drude-Institut für FestkörperelektronikPaul-Drude-Institut für FestkörperelektronikPhase change materials are a technologically important materials class and are used for data storage in rewritable DVDs and in phase change random access memory. Furthermore, new applications for phase change materials are emerging. Phase change materials with a high structural quality, such as offered by epitaxial films, are needed in order to study the fundamental properties of phase change materials and to improve our understanding of this materials class. Here, we review the progress made in the growth of crystalline phase change materials by physical methods, such as molecular beam epitaxy, sputtering, and pulsed laser deposition. First, we discuss the difference and similarities between these physical deposition methods and the crystal structures of Ge2Sb2Te5, the prototype phase change material. Next, we focus on the growth of epitiaxial GST films on (0 0 1)- and (1 1 1)-oriented substrates, leading to the conclusion that (1 1 1)-oriented substrates are preferred for the growth of phase change materials. Finally, the growth of GeTe/Sb2Te3 superlattices on amorphous and single crystalline substrates is discussed.http://dx.doi.org/10.1080/23746149.2017.1346483Phase change materialsMolecular beam epitaxypulsed laser depositionsputteringepitaxyGe2Sb2Te5 |
| spellingShingle | Jos E. Boschker Raffaella Calarco Growth of crystalline phase change materials by physical deposition methods Advances in Physics: X Phase change materials Molecular beam epitaxy pulsed laser deposition sputtering epitaxy Ge2Sb2Te5 |
| title | Growth of crystalline phase change materials by physical deposition methods |
| title_full | Growth of crystalline phase change materials by physical deposition methods |
| title_fullStr | Growth of crystalline phase change materials by physical deposition methods |
| title_full_unstemmed | Growth of crystalline phase change materials by physical deposition methods |
| title_short | Growth of crystalline phase change materials by physical deposition methods |
| title_sort | growth of crystalline phase change materials by physical deposition methods |
| topic | Phase change materials Molecular beam epitaxy pulsed laser deposition sputtering epitaxy Ge2Sb2Te5 |
| url | http://dx.doi.org/10.1080/23746149.2017.1346483 |
| work_keys_str_mv | AT joseboschker growthofcrystallinephasechangematerialsbyphysicaldepositionmethods AT raffaellacalarco growthofcrystallinephasechangematerialsbyphysicaldepositionmethods |