Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators
The effect of thermoelastic damping as a main dissipation mechanism in single crystalline silicon, GaAs, diamond, SiC and SiO2 micromechanical resonators are studied. Numerical simulation is performed to compare quality factors of the given materials. Results using Zener’s well-known approximation a...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
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AIP Publishing LLC
2017-05-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4984288 |
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author | Garuma Abdisa Denu Jiao Fu Zongchen Liu Jibran Hussain Mirani Hongxing Wang |
author_facet | Garuma Abdisa Denu Jiao Fu Zongchen Liu Jibran Hussain Mirani Hongxing Wang |
author_sort | Garuma Abdisa Denu |
collection | DOAJ |
description | The effect of thermoelastic damping as a main dissipation mechanism in single crystalline silicon, GaAs, diamond, SiC and SiO2 micromechanical resonators are studied. Numerical simulation is performed to compare quality factors of the given materials. Results using Zener’s well-known approximation and recent developments of Lifshitz and Roukes models were used to model thermoelasticity effects. In the later model, the effect of thermal diffusion length is taken into account for determination of thermoelastic damping. Our results show that larger discrepancy is obtained between the two models for SiO2. The difference is pronounced when beam aspect ratio (L/w) is smaller. Such progresses will find potential applications in optimal design of high quality factor micrometer- and nanometer-scale electromechanical systems. |
first_indexed | 2024-04-13T13:49:14Z |
format | Article |
id | doaj.art-aa271c82afe94a449d65d2709d6aa005 |
institution | Directory Open Access Journal |
issn | 2158-3226 |
language | English |
last_indexed | 2024-04-13T13:49:14Z |
publishDate | 2017-05-01 |
publisher | AIP Publishing LLC |
record_format | Article |
series | AIP Advances |
spelling | doaj.art-aa271c82afe94a449d65d2709d6aa0052022-12-22T02:44:23ZengAIP Publishing LLCAIP Advances2158-32262017-05-0175055014055014-910.1063/1.4984288058705ADVEffect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonatorsGaruma Abdisa Denu0Jiao Fu1Zongchen Liu2Jibran Hussain Mirani3Hongxing Wang4Institute of Wide Band Gap Semiconductors, Xi’an Jiaotong University, Xi’an 710049, ChinaInstitute of Wide Band Gap Semiconductors, Xi’an Jiaotong University, Xi’an 710049, ChinaInstitute of Wide Band Gap Semiconductors, Xi’an Jiaotong University, Xi’an 710049, ChinaInstitute of Wide Band Gap Semiconductors, Xi’an Jiaotong University, Xi’an 710049, ChinaInstitute of Wide Band Gap Semiconductors, Xi’an Jiaotong University, Xi’an 710049, ChinaThe effect of thermoelastic damping as a main dissipation mechanism in single crystalline silicon, GaAs, diamond, SiC and SiO2 micromechanical resonators are studied. Numerical simulation is performed to compare quality factors of the given materials. Results using Zener’s well-known approximation and recent developments of Lifshitz and Roukes models were used to model thermoelasticity effects. In the later model, the effect of thermal diffusion length is taken into account for determination of thermoelastic damping. Our results show that larger discrepancy is obtained between the two models for SiO2. The difference is pronounced when beam aspect ratio (L/w) is smaller. Such progresses will find potential applications in optimal design of high quality factor micrometer- and nanometer-scale electromechanical systems.http://dx.doi.org/10.1063/1.4984288 |
spellingShingle | Garuma Abdisa Denu Jiao Fu Zongchen Liu Jibran Hussain Mirani Hongxing Wang Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators AIP Advances |
title | Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators |
title_full | Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators |
title_fullStr | Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators |
title_full_unstemmed | Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators |
title_short | Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators |
title_sort | effect of thermoelastic damping on silicon gaas diamond and sic micromechanical resonators |
url | http://dx.doi.org/10.1063/1.4984288 |
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