Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell

Abstract The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatm...

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Main Authors: Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Chun-Chieh Lin, Tseung-Yuen Tseng
Format: Article
Language:English
Published: SpringerOpen 2018-10-01
Series:Nanoscale Research Letters
Subjects:
Online Access:http://link.springer.com/article/10.1186/s11671-018-2743-7
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author Firman Mangasa Simanjuntak
Sridhar Chandrasekaran
Chun-Chieh Lin
Tseung-Yuen Tseng
author_facet Firman Mangasa Simanjuntak
Sridhar Chandrasekaran
Chun-Chieh Lin
Tseung-Yuen Tseng
author_sort Firman Mangasa Simanjuntak
collection DOAJ
description Abstract The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO2 promotes the occurrence of switching behavior in Cu/ZnO2/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO2 is responsible for this degradation behavior and fine tuning on ZnO2 properties, which is necessary to achieve proper switching characteristics in ZnO2-based PMC devices.
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spelling doaj.art-aa400f46acb54fe28b66a9f4a570746a2023-09-03T02:16:42ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-10-011311810.1186/s11671-018-2743-7Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization CellFirman Mangasa Simanjuntak0Sridhar Chandrasekaran1Chun-Chieh Lin2Tseung-Yuen Tseng3Department of Electrical Engineering, National Dong Hwa UniversityDepartment of Electrical Engineering and Computer Science, National Chiao Tung UniversityDepartment of Electrical Engineering, National Dong Hwa UniversityDepartment of Electronics Engineering and Institute of Electronics, National Chiao Tung UniversityAbstract The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO2 promotes the occurrence of switching behavior in Cu/ZnO2/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO2 is responsible for this degradation behavior and fine tuning on ZnO2 properties, which is necessary to achieve proper switching characteristics in ZnO2-based PMC devices.http://link.springer.com/article/10.1186/s11671-018-2743-7Resistive switchingProgrammable metallization devicesZinc peroxidePMC
spellingShingle Firman Mangasa Simanjuntak
Sridhar Chandrasekaran
Chun-Chieh Lin
Tseung-Yuen Tseng
Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
Nanoscale Research Letters
Resistive switching
Programmable metallization devices
Zinc peroxide
PMC
title Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
title_full Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
title_fullStr Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
title_full_unstemmed Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
title_short Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
title_sort switching failure mechanism in zinc peroxide based programmable metallization cell
topic Resistive switching
Programmable metallization devices
Zinc peroxide
PMC
url http://link.springer.com/article/10.1186/s11671-018-2743-7
work_keys_str_mv AT firmanmangasasimanjuntak switchingfailuremechanisminzincperoxidebasedprogrammablemetallizationcell
AT sridharchandrasekaran switchingfailuremechanisminzincperoxidebasedprogrammablemetallizationcell
AT chunchiehlin switchingfailuremechanisminzincperoxidebasedprogrammablemetallizationcell
AT tseungyuentseng switchingfailuremechanisminzincperoxidebasedprogrammablemetallizationcell