Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
Abstract The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatm...
Main Authors: | Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Chun-Chieh Lin, Tseung-Yuen Tseng |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2018-10-01
|
Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-018-2743-7 |
Similar Items
-
ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
by: Firman Mangasa Simanjuntak, et al.
Published: (2019-05-01) -
Mitigating Microbursts by Packet Recirculation in Programmable Switch
by: Ping-Hsien Huang, et al.
Published: (2024-01-01) -
Real-Time In-Network Microburst Mitigation on Programmable Switch
by: Yu-Jie Lin, et al.
Published: (2022-01-01) -
Programmable Spectral Filter in C-Band Based on Digital Micromirror Device
by: Yunshu Gao, et al.
Published: (2019-02-01) -
Amperometric Non-Enzymatic Hydrogen Peroxide Sensor Based on Aligned Zinc Oxide Nanorods
by: Naif H. Al-Hardan, et al.
Published: (2016-06-01)