Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decomposition
Abstract We developed a Joule heating decomposition (JHD) method, which applied direct current on the SiC for the epitaxial growth of multi-layer graphene (MLG) films on Si-terminated (0001) face of the high doping 4H-SiC substrate. By this JHD method, the growth time for preparing MLG was only seve...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2018-07-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-018-2606-2 |
| _version_ | 1797760102048989184 |
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| author | Zhiwei Zhang Weiwei Cai Rongdun Hong Dingqu Lin Xiaping Chen Jiafa Cai Zhengyun Wu |
| author_facet | Zhiwei Zhang Weiwei Cai Rongdun Hong Dingqu Lin Xiaping Chen Jiafa Cai Zhengyun Wu |
| author_sort | Zhiwei Zhang |
| collection | DOAJ |
| description | Abstract We developed a Joule heating decomposition (JHD) method, which applied direct current on the SiC for the epitaxial growth of multi-layer graphene (MLG) films on Si-terminated (0001) face of the high doping 4H-SiC substrate. By this JHD method, the growth time for preparing MLG was only several minutes. Raman spectroscopy was employed to study the influence of the temperature caused by the Joule heating on the quality and the uniformity of the sample. Then, other properties, such as the strain, the layer’s number, and the electric characteristics, of the MLG were studied in details. It was found that the quality of the MLG was substantially dependent on the growth temperature (operation current) and the growth time, while the layer’s number was only dependent on the growth temperature but not the growth time. Finally, less-defect and homogeneous MLG (~ 45 layers) with an area of ~ 12 × 5 mm2 could be obtained at a heating temperature of ~ 1470 °C with duration time of 5 min. By using the linear transmission line method, the specific contact resistance of Au and MLG was 5.03 × 10−5 Ω cm2, and the sheet resistance was 52.36 Ω/sq, respectively. |
| first_indexed | 2024-03-12T18:53:47Z |
| format | Article |
| id | doaj.art-aa6067c5598c459aa8f31fbe17292b7f |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T18:53:47Z |
| publishDate | 2018-07-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-aa6067c5598c459aa8f31fbe17292b7f2023-08-02T07:00:31ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-07-011311710.1186/s11671-018-2606-2Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat DecompositionZhiwei Zhang0Weiwei Cai1Rongdun Hong2Dingqu Lin3Xiaping Chen4Jiafa Cai5Zhengyun Wu6Department of Physics, Xiamen UniversityDepartment of Physics, Xiamen UniversityDepartment of Physics, Xiamen UniversityDepartment of Physics, Xiamen UniversityDepartment of Physics, Xiamen UniversityDepartment of Physics, Xiamen UniversityDepartment of Physics, Xiamen UniversityAbstract We developed a Joule heating decomposition (JHD) method, which applied direct current on the SiC for the epitaxial growth of multi-layer graphene (MLG) films on Si-terminated (0001) face of the high doping 4H-SiC substrate. By this JHD method, the growth time for preparing MLG was only several minutes. Raman spectroscopy was employed to study the influence of the temperature caused by the Joule heating on the quality and the uniformity of the sample. Then, other properties, such as the strain, the layer’s number, and the electric characteristics, of the MLG were studied in details. It was found that the quality of the MLG was substantially dependent on the growth temperature (operation current) and the growth time, while the layer’s number was only dependent on the growth temperature but not the growth time. Finally, less-defect and homogeneous MLG (~ 45 layers) with an area of ~ 12 × 5 mm2 could be obtained at a heating temperature of ~ 1470 °C with duration time of 5 min. By using the linear transmission line method, the specific contact resistance of Au and MLG was 5.03 × 10−5 Ω cm2, and the sheet resistance was 52.36 Ω/sq, respectively.http://link.springer.com/article/10.1186/s11671-018-2606-2Carbon materialsSemiconductorsRaman |
| spellingShingle | Zhiwei Zhang Weiwei Cai Rongdun Hong Dingqu Lin Xiaping Chen Jiafa Cai Zhengyun Wu Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decomposition Nanoscale Research Letters Carbon materials Semiconductors Raman |
| title | Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decomposition |
| title_full | Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decomposition |
| title_fullStr | Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decomposition |
| title_full_unstemmed | Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decomposition |
| title_short | Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decomposition |
| title_sort | raman spectroscopy of multi layer graphene epitaxially grown on 4h sic by joule heat decomposition |
| topic | Carbon materials Semiconductors Raman |
| url | http://link.springer.com/article/10.1186/s11671-018-2606-2 |
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