A 250 m Direct Time-of-Flight Ranging System Based on a Synthesis of Sub-Ranging Images and a Vertical Avalanche Photo-Diodes (VAPD) CMOS Image Sensor
We have developed a direct time-of-flight (TOF) 250 m ranging Complementary Metal Oxide Semiconductor (CMOS) image sensor (CIS) based on a 688 × 384 pixels array of vertical avalanche photodiodes (VAPD). Each pixel of the CIS comprises VAPD with a standard four transistor pixel circuit equi...
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2018-10-01
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author | Yutaka Hirose Shinzo Koyama Motonori Ishii Shigeru Saitou Masato Takemoto Yugo Nose Akito Inoue Yusuke Sakata Yuki Sugiura Tatsuya Kabe Manabu Usuda Shigetaka Kasuga Mitsuyoshi Mori Akihiro Odagawa Tsuyoshi Tanaka |
author_facet | Yutaka Hirose Shinzo Koyama Motonori Ishii Shigeru Saitou Masato Takemoto Yugo Nose Akito Inoue Yusuke Sakata Yuki Sugiura Tatsuya Kabe Manabu Usuda Shigetaka Kasuga Mitsuyoshi Mori Akihiro Odagawa Tsuyoshi Tanaka |
author_sort | Yutaka Hirose |
collection | DOAJ |
description | We have developed a direct time-of-flight (TOF) 250 m ranging Complementary Metal Oxide Semiconductor (CMOS) image sensor (CIS) based on a 688 × 384 pixels array of vertical avalanche photodiodes (VAPD). Each pixel of the CIS comprises VAPD with a standard four transistor pixel circuit equipped with an analogue capacitor to accumulate or count avalanche pulses. High power near infrared (NIR) short (<50 ns) and repetitive (6 kHz) laser pulses are illuminated through a diffusing optics. By globally gating the VAPD, each pulse is counted in the in-pixel counter enabling extraction of sub-photon level signal. Depth map imaging with a 10 cm lateral resolution is realized from 1 m to 250 m range by synthesizing subranges images of photon counts. Advantages and limitation of an in-pixel circuit are described. The developed CIS is expected to supersede insufficient resolution of the conventional light detection and ranging (LiDAR) systems and the short range of indirect CIS TOF. |
first_indexed | 2024-04-14T04:28:44Z |
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institution | Directory Open Access Journal |
issn | 1424-8220 |
language | English |
last_indexed | 2024-04-14T04:28:44Z |
publishDate | 2018-10-01 |
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spelling | doaj.art-aa72a0acb4934787b5c434b5ed5ad7f32022-12-22T02:12:09ZengMDPI AGSensors1424-82202018-10-011811364210.3390/s18113642s18113642A 250 m Direct Time-of-Flight Ranging System Based on a Synthesis of Sub-Ranging Images and a Vertical Avalanche Photo-Diodes (VAPD) CMOS Image SensorYutaka Hirose0Shinzo Koyama1Motonori Ishii2Shigeru Saitou3Masato Takemoto4Yugo Nose5Akito Inoue6Yusuke Sakata7Yuki Sugiura8Tatsuya Kabe9Manabu Usuda10Shigetaka Kasuga11Mitsuyoshi Mori12Akihiro Odagawa13Tsuyoshi Tanaka14Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, JapanPanasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, JapanPanasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, JapanPanasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, JapanPanasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, JapanPanasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, JapanPanasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, JapanPanasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, JapanPanasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, JapanPanasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, JapanPanasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, JapanPanasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, JapanPanasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, JapanPanasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, JapanPanasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, JapanWe have developed a direct time-of-flight (TOF) 250 m ranging Complementary Metal Oxide Semiconductor (CMOS) image sensor (CIS) based on a 688 × 384 pixels array of vertical avalanche photodiodes (VAPD). Each pixel of the CIS comprises VAPD with a standard four transistor pixel circuit equipped with an analogue capacitor to accumulate or count avalanche pulses. High power near infrared (NIR) short (<50 ns) and repetitive (6 kHz) laser pulses are illuminated through a diffusing optics. By globally gating the VAPD, each pulse is counted in the in-pixel counter enabling extraction of sub-photon level signal. Depth map imaging with a 10 cm lateral resolution is realized from 1 m to 250 m range by synthesizing subranges images of photon counts. Advantages and limitation of an in-pixel circuit are described. The developed CIS is expected to supersede insufficient resolution of the conventional light detection and ranging (LiDAR) systems and the short range of indirect CIS TOF.https://www.mdpi.com/1424-8220/18/11/3642avalanche photodiodevertical avalanche photodiodetime-of-flightCMOS image sensorphoton countingranging |
spellingShingle | Yutaka Hirose Shinzo Koyama Motonori Ishii Shigeru Saitou Masato Takemoto Yugo Nose Akito Inoue Yusuke Sakata Yuki Sugiura Tatsuya Kabe Manabu Usuda Shigetaka Kasuga Mitsuyoshi Mori Akihiro Odagawa Tsuyoshi Tanaka A 250 m Direct Time-of-Flight Ranging System Based on a Synthesis of Sub-Ranging Images and a Vertical Avalanche Photo-Diodes (VAPD) CMOS Image Sensor Sensors avalanche photodiode vertical avalanche photodiode time-of-flight CMOS image sensor photon counting ranging |
title | A 250 m Direct Time-of-Flight Ranging System Based on a Synthesis of Sub-Ranging Images and a Vertical Avalanche Photo-Diodes (VAPD) CMOS Image Sensor |
title_full | A 250 m Direct Time-of-Flight Ranging System Based on a Synthesis of Sub-Ranging Images and a Vertical Avalanche Photo-Diodes (VAPD) CMOS Image Sensor |
title_fullStr | A 250 m Direct Time-of-Flight Ranging System Based on a Synthesis of Sub-Ranging Images and a Vertical Avalanche Photo-Diodes (VAPD) CMOS Image Sensor |
title_full_unstemmed | A 250 m Direct Time-of-Flight Ranging System Based on a Synthesis of Sub-Ranging Images and a Vertical Avalanche Photo-Diodes (VAPD) CMOS Image Sensor |
title_short | A 250 m Direct Time-of-Flight Ranging System Based on a Synthesis of Sub-Ranging Images and a Vertical Avalanche Photo-Diodes (VAPD) CMOS Image Sensor |
title_sort | 250 m direct time of flight ranging system based on a synthesis of sub ranging images and a vertical avalanche photo diodes vapd cmos image sensor |
topic | avalanche photodiode vertical avalanche photodiode time-of-flight CMOS image sensor photon counting ranging |
url | https://www.mdpi.com/1424-8220/18/11/3642 |
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