An S/C/X-Band 4-Bit Digital Step Attenuator MMIC with 0.25 μm GaN HEMT Technology
In this paper, a 4-bit digital step attenuator using 0.25 μm GaN HEMT technology for wideband radar systems is presented. A switched-path attenuator topology with resistive T-type attenuators and double-pole double-throw (DPDT) switches was used to achieve both low insertion loss and phase/amplitude...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-05-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/12/9/4717 |
| Summary: | In this paper, a 4-bit digital step attenuator using 0.25 μm GaN HEMT technology for wideband radar systems is presented. A switched-path attenuator topology with resistive T-type attenuators and double-pole double-throw (DPDT) switches was used to achieve both low insertion loss and phase/amplitude error. The measured insertion loss of the reference state is 2.8–8.3 dB at DC-12 GHz. The input and output return loss are less than 12 dB at DC-12 GHz. An attenuation coverage of 30 dB with a least significant bit of 2 dB was achieved at DC-12 GHz. A root mean square (RMS) amplitude error of 1 dB and a phase error of 8.5° were achieved, respectively. The attenuator chip size is 2.45 mm × 1.75 mm including pads. To the best of the authors’ knowledge, this is the first demonstration of a GaN-based digital step attenuator. |
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| ISSN: | 2076-3417 |