Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes

Bibliographic Details
Main Authors: Marcelo B. Barbosa, João Guilherme Correia, Katharina Lorenz, Armandina M. L. Lopes, Gonçalo N. P. Oliveira, Abel S. Fenta, Juliana Schell, Ricardo Teixeira, Emilio Nogales, Bianchi Méndez, Alessandro Stroppa, João Pedro Araújo
Format: Article
Language:English
Published: Nature Portfolio 2024-03-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-024-56764-1
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author Marcelo B. Barbosa
João Guilherme Correia
Katharina Lorenz
Armandina M. L. Lopes
Gonçalo N. P. Oliveira
Abel S. Fenta
Juliana Schell
Ricardo Teixeira
Emilio Nogales
Bianchi Méndez
Alessandro Stroppa
João Pedro Araújo
author_facet Marcelo B. Barbosa
João Guilherme Correia
Katharina Lorenz
Armandina M. L. Lopes
Gonçalo N. P. Oliveira
Abel S. Fenta
Juliana Schell
Ricardo Teixeira
Emilio Nogales
Bianchi Méndez
Alessandro Stroppa
João Pedro Araújo
author_sort Marcelo B. Barbosa
collection DOAJ
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institution Directory Open Access Journal
issn 2045-2322
language English
last_indexed 2024-04-24T19:56:13Z
publishDate 2024-03-01
publisher Nature Portfolio
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spelling doaj.art-aaba7421c0f44777b0e57d0f2915655a2024-03-24T12:20:43ZengNature PortfolioScientific Reports2045-23222024-03-011411110.1038/s41598-024-56764-1Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probesMarcelo B. Barbosa0João Guilherme Correia1Katharina Lorenz2Armandina M. L. Lopes3Gonçalo N. P. Oliveira4Abel S. Fenta5Juliana Schell6Ricardo Teixeira7Emilio Nogales8Bianchi Méndez9Alessandro Stroppa10João Pedro Araújo11IFIMUP, Institute of Physics for Advanced Materials, Nanotechnology and Photonics, Departamento de Física e Astronomia da Faculdade de Ciências da Universidade do PortoC2TN, DECN, Instituto Superior Técnico, Universidade de LisboaINESC-MN, IPFN, Instituto Superior Técnico, Universidade de LisboaIFIMUP, Institute of Physics for Advanced Materials, Nanotechnology and Photonics, Departamento de Física e Astronomia da Faculdade de Ciências da Universidade do PortoIFIMUP, Institute of Physics for Advanced Materials, Nanotechnology and Photonics, Departamento de Física e Astronomia da Faculdade de Ciências da Universidade do PortoEP Department, European Organization for Nuclear Research (CERN)EP Department, European Organization for Nuclear Research (CERN)C2TN, DECN, Instituto Superior Técnico, Universidade de LisboaDepartamento de Física de Materiales, Universidad Complutense de MadridDepartamento de Física de Materiales, Universidad Complutense de MadridCNR-SPIN c/o Università degli Studi dell’AquilaIFIMUP, Institute of Physics for Advanced Materials, Nanotechnology and Photonics, Departamento de Física e Astronomia da Faculdade de Ciências da Universidade do Portohttps://doi.org/10.1038/s41598-024-56764-1
spellingShingle Marcelo B. Barbosa
João Guilherme Correia
Katharina Lorenz
Armandina M. L. Lopes
Gonçalo N. P. Oliveira
Abel S. Fenta
Juliana Schell
Ricardo Teixeira
Emilio Nogales
Bianchi Méndez
Alessandro Stroppa
João Pedro Araújo
Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes
Scientific Reports
title Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes
title_full Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes
title_fullStr Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes
title_full_unstemmed Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes
title_short Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes
title_sort author correction contactless doping characterization of ga2o3 using acceptor cd probes
url https://doi.org/10.1038/s41598-024-56764-1
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