Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes
Main Authors: | , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Nature Portfolio
2024-03-01
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Series: | Scientific Reports |
Online Access: | https://doi.org/10.1038/s41598-024-56764-1 |
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author | Marcelo B. Barbosa João Guilherme Correia Katharina Lorenz Armandina M. L. Lopes Gonçalo N. P. Oliveira Abel S. Fenta Juliana Schell Ricardo Teixeira Emilio Nogales Bianchi Méndez Alessandro Stroppa João Pedro Araújo |
author_facet | Marcelo B. Barbosa João Guilherme Correia Katharina Lorenz Armandina M. L. Lopes Gonçalo N. P. Oliveira Abel S. Fenta Juliana Schell Ricardo Teixeira Emilio Nogales Bianchi Méndez Alessandro Stroppa João Pedro Araújo |
author_sort | Marcelo B. Barbosa |
collection | DOAJ |
first_indexed | 2024-04-24T19:56:13Z |
format | Article |
id | doaj.art-aaba7421c0f44777b0e57d0f2915655a |
institution | Directory Open Access Journal |
issn | 2045-2322 |
language | English |
last_indexed | 2024-04-24T19:56:13Z |
publishDate | 2024-03-01 |
publisher | Nature Portfolio |
record_format | Article |
series | Scientific Reports |
spelling | doaj.art-aaba7421c0f44777b0e57d0f2915655a2024-03-24T12:20:43ZengNature PortfolioScientific Reports2045-23222024-03-011411110.1038/s41598-024-56764-1Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probesMarcelo B. Barbosa0João Guilherme Correia1Katharina Lorenz2Armandina M. L. Lopes3Gonçalo N. P. Oliveira4Abel S. Fenta5Juliana Schell6Ricardo Teixeira7Emilio Nogales8Bianchi Méndez9Alessandro Stroppa10João Pedro Araújo11IFIMUP, Institute of Physics for Advanced Materials, Nanotechnology and Photonics, Departamento de Física e Astronomia da Faculdade de Ciências da Universidade do PortoC2TN, DECN, Instituto Superior Técnico, Universidade de LisboaINESC-MN, IPFN, Instituto Superior Técnico, Universidade de LisboaIFIMUP, Institute of Physics for Advanced Materials, Nanotechnology and Photonics, Departamento de Física e Astronomia da Faculdade de Ciências da Universidade do PortoIFIMUP, Institute of Physics for Advanced Materials, Nanotechnology and Photonics, Departamento de Física e Astronomia da Faculdade de Ciências da Universidade do PortoEP Department, European Organization for Nuclear Research (CERN)EP Department, European Organization for Nuclear Research (CERN)C2TN, DECN, Instituto Superior Técnico, Universidade de LisboaDepartamento de Física de Materiales, Universidad Complutense de MadridDepartamento de Física de Materiales, Universidad Complutense de MadridCNR-SPIN c/o Università degli Studi dell’AquilaIFIMUP, Institute of Physics for Advanced Materials, Nanotechnology and Photonics, Departamento de Física e Astronomia da Faculdade de Ciências da Universidade do Portohttps://doi.org/10.1038/s41598-024-56764-1 |
spellingShingle | Marcelo B. Barbosa João Guilherme Correia Katharina Lorenz Armandina M. L. Lopes Gonçalo N. P. Oliveira Abel S. Fenta Juliana Schell Ricardo Teixeira Emilio Nogales Bianchi Méndez Alessandro Stroppa João Pedro Araújo Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes Scientific Reports |
title | Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes |
title_full | Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes |
title_fullStr | Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes |
title_full_unstemmed | Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes |
title_short | Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes |
title_sort | author correction contactless doping characterization of ga2o3 using acceptor cd probes |
url | https://doi.org/10.1038/s41598-024-56764-1 |
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