Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs)
A gate-normal hetero-gate-dielectric (GHG) tunnel field-effect transistor (TFET) and the guidelines for its design are proposed. The introduction of the HG structure into gate-normal TFETs improves device performance by lowering subthreshold swing (SS). It is confirmed that the SS of the proposed GH...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9055358/ |
| Summary: | A gate-normal hetero-gate-dielectric (GHG) tunnel field-effect transistor (TFET) and the guidelines for its design are proposed. The introduction of the HG structure into gate-normal TFETs improves device performance by lowering subthreshold swing (SS). It is confirmed that the SS of the proposed GHG TFET is successfully enhanced by suppressing the gate-diagonal tunneling current. Compared with conventional gate-normal TFETs, the final optimized GHG TFET improves the values of the point SS, effective SS, and on-current by 71 %, 15 %, and 2.4 times, respectively. |
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| ISSN: | 2169-3536 |