Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs)
A gate-normal hetero-gate-dielectric (GHG) tunnel field-effect transistor (TFET) and the guidelines for its design are proposed. The introduction of the HG structure into gate-normal TFETs improves device performance by lowering subthreshold swing (SS). It is confirmed that the SS of the proposed GH...
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9055358/ |
| _version_ | 1818663892048412672 |
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| author | Jang Woo Lee Woo Young Choi |
| author_facet | Jang Woo Lee Woo Young Choi |
| author_sort | Jang Woo Lee |
| collection | DOAJ |
| description | A gate-normal hetero-gate-dielectric (GHG) tunnel field-effect transistor (TFET) and the guidelines for its design are proposed. The introduction of the HG structure into gate-normal TFETs improves device performance by lowering subthreshold swing (SS). It is confirmed that the SS of the proposed GHG TFET is successfully enhanced by suppressing the gate-diagonal tunneling current. Compared with conventional gate-normal TFETs, the final optimized GHG TFET improves the values of the point SS, effective SS, and on-current by 71 %, 15 %, and 2.4 times, respectively. |
| first_indexed | 2024-12-17T05:24:04Z |
| format | Article |
| id | doaj.art-aabe24cc71004da48538d52d02c75180 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-17T05:24:04Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-aabe24cc71004da48538d52d02c751802022-12-21T22:01:56ZengIEEEIEEE Access2169-35362020-01-018676176762410.1109/ACCESS.2020.29851259055358Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs)Jang Woo Lee0https://orcid.org/0000-0002-7369-2357Woo Young Choi1https://orcid.org/0000-0002-5515-2912Department of Electronic Engineering, Sogang University, Seoul, South KoreaDepartment of Electronic Engineering, Sogang University, Seoul, South KoreaA gate-normal hetero-gate-dielectric (GHG) tunnel field-effect transistor (TFET) and the guidelines for its design are proposed. The introduction of the HG structure into gate-normal TFETs improves device performance by lowering subthreshold swing (SS). It is confirmed that the SS of the proposed GHG TFET is successfully enhanced by suppressing the gate-diagonal tunneling current. Compared with conventional gate-normal TFETs, the final optimized GHG TFET improves the values of the point SS, effective SS, and on-current by 71 %, 15 %, and 2.4 times, respectively.https://ieeexplore.ieee.org/document/9055358/Band-to-band tunneling (BTBT)gate-normal hetero-gate-dielectric tunnel field-effect transistor (GHG TFET)subthreshold swing (SS) |
| spellingShingle | Jang Woo Lee Woo Young Choi Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs) IEEE Access Band-to-band tunneling (BTBT) gate-normal hetero-gate-dielectric tunnel field-effect transistor (GHG TFET) subthreshold swing (SS) |
| title | Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs) |
| title_full | Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs) |
| title_fullStr | Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs) |
| title_full_unstemmed | Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs) |
| title_short | Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs) |
| title_sort | design guidelines for gate normal hetero gate dielectric ghg tunnel field effect transistors tfets |
| topic | Band-to-band tunneling (BTBT) gate-normal hetero-gate-dielectric tunnel field-effect transistor (GHG TFET) subthreshold swing (SS) |
| url | https://ieeexplore.ieee.org/document/9055358/ |
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