In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts
Abstract Large‐scale manufacturing of polysilicon‐based passivating contacts for high‐efficiency crystalline silicon (c‐Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum‐mechanical tunneling. Here,...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2020-11-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202000589 |
| _version_ | 1797730895251111936 |
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| author | Areej Alzahrani Thomas G. Allen Michele De Bastiani Emmanuel Van Kerschaver George T. Harrison Wenzhu Liu Stefaan De Wolf |
| author_facet | Areej Alzahrani Thomas G. Allen Michele De Bastiani Emmanuel Van Kerschaver George T. Harrison Wenzhu Liu Stefaan De Wolf |
| author_sort | Areej Alzahrani |
| collection | DOAJ |
| description | Abstract Large‐scale manufacturing of polysilicon‐based passivating contacts for high‐efficiency crystalline silicon (c‐Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum‐mechanical tunneling. Here, plasma‐dissociated CO2 is investigated to grow in situ thin (<2 nm) SiOx films on c‐Si wafers as tunnel‐oxides for plasma‐deposited, hole‐collecting (i.e., p‐type) polysilicon contacts. It is found that such plasma processing offers excellent thickness control and superior structural integrity upon thermal annealing at 1000 °C, compared to state‐of‐the‐art wet‐chemical oxides. As a result, p‐type polysilicon contacts are achieved on n‐type c‐Si wafers that combine excellent surface passivation, resulting in an implied open‐circuit voltage exceeding 700 mV, with a contact resistance as low as 0.02 Ω cm2. |
| first_indexed | 2024-03-12T11:50:49Z |
| format | Article |
| id | doaj.art-aaecf5f79e944154a0fdea09c24f5be6 |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-12T11:50:49Z |
| publishDate | 2020-11-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-aaecf5f79e944154a0fdea09c24f5be62023-08-31T08:56:02ZengWiley-VCHAdvanced Materials Interfaces2196-73502020-11-01721n/an/a10.1002/admi.202000589In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating ContactsAreej Alzahrani0Thomas G. Allen1Michele De Bastiani2Emmanuel Van Kerschaver3George T. Harrison4Wenzhu Liu5Stefaan De Wolf6KAUST Solar Center (KSC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi ArabiaKAUST Solar Center (KSC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi ArabiaKAUST Solar Center (KSC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi ArabiaKAUST Solar Center (KSC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi ArabiaKAUST Solar Center (KSC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi ArabiaKAUST Solar Center (KSC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi ArabiaKAUST Solar Center (KSC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi ArabiaAbstract Large‐scale manufacturing of polysilicon‐based passivating contacts for high‐efficiency crystalline silicon (c‐Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum‐mechanical tunneling. Here, plasma‐dissociated CO2 is investigated to grow in situ thin (<2 nm) SiOx films on c‐Si wafers as tunnel‐oxides for plasma‐deposited, hole‐collecting (i.e., p‐type) polysilicon contacts. It is found that such plasma processing offers excellent thickness control and superior structural integrity upon thermal annealing at 1000 °C, compared to state‐of‐the‐art wet‐chemical oxides. As a result, p‐type polysilicon contacts are achieved on n‐type c‐Si wafers that combine excellent surface passivation, resulting in an implied open‐circuit voltage exceeding 700 mV, with a contact resistance as low as 0.02 Ω cm2.https://doi.org/10.1002/admi.202000589polysilicon passivating contactssiliconsolar cells |
| spellingShingle | Areej Alzahrani Thomas G. Allen Michele De Bastiani Emmanuel Van Kerschaver George T. Harrison Wenzhu Liu Stefaan De Wolf In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts Advanced Materials Interfaces polysilicon passivating contacts silicon solar cells |
| title | In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts |
| title_full | In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts |
| title_fullStr | In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts |
| title_full_unstemmed | In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts |
| title_short | In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts |
| title_sort | in situ plasma grown silicon oxide for polysilicon passivating contacts |
| topic | polysilicon passivating contacts silicon solar cells |
| url | https://doi.org/10.1002/admi.202000589 |
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