SIMULATION OF STATIC AND DYNAMIC LOSSES IN MOSFET KEYS
Issues of modeling of losses in MOSFET keys from the Electronics Workbench (EWB) program library as well as optimization of the power key operation mode are considered. A number of important facts have been obtained by using the EWB program of circuit simulation, which should be taken into account w...
Main Authors: | V. P. Babenko, V. K. Bityukov, V. V. Kuznetsov, D. S. Simachkov |
---|---|
Format: | Article |
Language: | Russian |
Published: |
MIREA - Russian Technological University
2018-02-01
|
Series: | Российский технологический журнал |
Subjects: | |
Online Access: | https://www.rtj-mirea.ru/jour/article/view/98 |
Similar Items
-
A Gate Driver Based on Variable Voltage and Resistance for Suppressing Overcurrent and Overvoltage of SiC MOSFETs
by: Jiangui Chen, et al.
Published: (2019-04-01) -
SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss
by: Shenglong Ran, et al.
Published: (2022-02-01) -
Circuit-Specific and Technology-Independent Criterion for Selection of Power MOSFETs That Minimize Energy Dissipation
by: Vikas Joshi, et al.
Published: (2023-01-01) -
A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness
by: Jongwoon Yoon, et al.
Published: (2021-10-01) -
An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance
by: Nilesh Kumar Jaiswal, et al.
Published: (2023-01-01)