The Correlation between Surface V-Shaped Defects and Local Breakdown Phenomena in GaN-Based LEDs

The Correlation between Surface V-Shaped Defects and Local Breakdown Phenomena in GaN-Based LEDs

This paper investigates the intriguing impact of surface V-shaped defects on the electrical and optical characteristics of GaN-based LEDs, particularly under reverse bias conditions. These defects introduce unique luminescence phenomena, notably giant dot-like luminescence (GDL), and exert significa...

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Bibliographic Details
Main Authors: Seung-Hye Baek, Dae-Choul Choi, Yoon Seok Kim, Hyunseok Na, Sung-Nam Lee
Format: Article
Language:English
Published: MDPI AG 2023-09-01
Series:Photonics
Subjects:
GaN
light-emitting diode
breakdown
leakage current
Online Access:https://www.mdpi.com/2304-6732/10/10/1103

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