Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier

Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier

Electron leakage has an adverse influence on the optical output power for laser diodes (LDs), especially where the conventional last quantum barrier (LQB) in the multiple quantum well (MQW) active region may cause severe leakage problems. In this article, a composite last quantum barrier (CLQB) comp...

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Bibliographic Details
Main Authors: Zhenzhuo Zhang, Jing Yang, Degang Zhao, Feng Liang, Ping Chen, Zongshun Liu
Format: Article
Language:English
Published: MDPI AG 2022-11-01
Series:Nanomaterials
Subjects:
InGaN-based laser diodes
optical output power
slope efficiency
quantum barrier
electron leakage
hole injection
Online Access:https://www.mdpi.com/2079-4991/12/22/3990

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