Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis
The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance...
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MDPI AG
2022-09-01
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| Online Access: | https://www.mdpi.com/1996-1944/15/19/6736 |
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| author | Suman Das Yongju Zheng Ayayi Ahyi Marcelo A. Kuroda Sarit Dhar |
| author_facet | Suman Das Yongju Zheng Ayayi Ahyi Marcelo A. Kuroda Sarit Dhar |
| author_sort | Suman Das |
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| description | The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance in these transistors. In this work, the dominant scattering mechanisms are distinguished for inversion layer electrons and holes using temperature and body-bias-dependent Hall measurements on nitrided lateral 4H-SiC MOSFETs. The effect of the transverse electric field (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>E</mi><mrow><mi>e</mi><mi>f</mi><mi>f</mi></mrow></msub></mrow></semantics></math></inline-formula>) on carrier mobility is analyzed under strong inversion condition where surface roughness scattering becomes prevalent. Power law dependencies of the electron and hole Hall mobility for surface roughness scattering are determined to be <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msubsup><mi>E</mi><mrow><mi>e</mi><mi>f</mi><mi>f</mi></mrow><mrow><mo>−</mo><mn>1.8</mn></mrow></msubsup></mrow></semantics></math></inline-formula> and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msubsup><mi>E</mi><mrow><mi>e</mi><mi>f</mi><mi>f</mi></mrow><mrow><mo>−</mo><mn>2.4</mn></mrow></msubsup></mrow></semantics></math></inline-formula>, respectively, analogous to those of silicon MOSFETs. Moreover, for n-channel MOSFETs, the effect of phonon scattering is observed at zero body bias, whereas in p-channel MOSFETs, it is observed only under negative body biases. Along with the identification of regimes governed by different scattering mechanisms, these results highlight the importance of the selection of substrate doping and of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>E</mi><mrow><mi>e</mi><mi>f</mi><mi>f</mi></mrow></msub></mrow></semantics></math></inline-formula> in controlling the value of channel mobility in 4H-SiC MOSFETs. |
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| language | English |
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| spelling | doaj.art-abdae61dc89642ec91a20c4ae608ad9f2023-11-23T20:55:54ZengMDPI AGMaterials1996-19442022-09-011519673610.3390/ma15196736Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall AnalysisSuman Das0Yongju Zheng1Ayayi Ahyi2Marcelo A. Kuroda3Sarit Dhar4Department of Physics, Auburn University, Auburn, AL 36849, USADepartment of Physics, Auburn University, Auburn, AL 36849, USADepartment of Physics, Auburn University, Auburn, AL 36849, USADepartment of Physics, Auburn University, Auburn, AL 36849, USADepartment of Physics, Auburn University, Auburn, AL 36849, USAThe channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance in these transistors. In this work, the dominant scattering mechanisms are distinguished for inversion layer electrons and holes using temperature and body-bias-dependent Hall measurements on nitrided lateral 4H-SiC MOSFETs. The effect of the transverse electric field (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>E</mi><mrow><mi>e</mi><mi>f</mi><mi>f</mi></mrow></msub></mrow></semantics></math></inline-formula>) on carrier mobility is analyzed under strong inversion condition where surface roughness scattering becomes prevalent. Power law dependencies of the electron and hole Hall mobility for surface roughness scattering are determined to be <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msubsup><mi>E</mi><mrow><mi>e</mi><mi>f</mi><mi>f</mi></mrow><mrow><mo>−</mo><mn>1.8</mn></mrow></msubsup></mrow></semantics></math></inline-formula> and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msubsup><mi>E</mi><mrow><mi>e</mi><mi>f</mi><mi>f</mi></mrow><mrow><mo>−</mo><mn>2.4</mn></mrow></msubsup></mrow></semantics></math></inline-formula>, respectively, analogous to those of silicon MOSFETs. Moreover, for n-channel MOSFETs, the effect of phonon scattering is observed at zero body bias, whereas in p-channel MOSFETs, it is observed only under negative body biases. Along with the identification of regimes governed by different scattering mechanisms, these results highlight the importance of the selection of substrate doping and of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>E</mi><mrow><mi>e</mi><mi>f</mi><mi>f</mi></mrow></msub></mrow></semantics></math></inline-formula> in controlling the value of channel mobility in 4H-SiC MOSFETs.https://www.mdpi.com/1996-1944/15/19/67364H-SiC MOSFETnitridationscatteringHall measurementsbody biastransverse electric field |
| spellingShingle | Suman Das Yongju Zheng Ayayi Ahyi Marcelo A. Kuroda Sarit Dhar Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis Materials 4H-SiC MOSFET nitridation scattering Hall measurements body bias transverse electric field |
| title | Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis |
| title_full | Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis |
| title_fullStr | Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis |
| title_full_unstemmed | Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis |
| title_short | Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis |
| title_sort | study of carrier mobilities in 4h sic mosfets using hall analysis |
| topic | 4H-SiC MOSFET nitridation scattering Hall measurements body bias transverse electric field |
| url | https://www.mdpi.com/1996-1944/15/19/6736 |
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