Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis
The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-09-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/15/19/6736 |