Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)

Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)

The hump behavior of gate-normal nanowire tunnel field-effect transistors (NWTFETs) is investigated by using a three-dimensional technology computer-aided design (TCAD) simulation. The simulation results show that the hump behavior degrades the subthreshold swing (<i>SS</i>) and on-curre...

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Bibliographic Details
Main Authors: Min Woo Kang, Woo Young Choi
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Applied Sciences
Subjects:
hump behavior
corner
surface potential
gate-normal nanowire tunnel field-effect transistor (NWTFET)
Online Access:https://www.mdpi.com/2076-3417/10/24/8880

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