Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array
We report on the effects of the intense pulsed light (IPL) rapid annealing process and back-channel passivation on the solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) array. To improve the electrical properties, stability and uniformity of IGZO TFTs, the oxide channel layers were t...
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| Format: | Article |
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MDPI AG
2020-05-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/11/5/508 |
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| author | Hyun Jae Kim Chul Jong Han Byungwook Yoo Jeongno Lee Kimoon Lee Kyu Hyoung Lee Min Suk Oh |
| author_facet | Hyun Jae Kim Chul Jong Han Byungwook Yoo Jeongno Lee Kimoon Lee Kyu Hyoung Lee Min Suk Oh |
| author_sort | Hyun Jae Kim |
| collection | DOAJ |
| description | We report on the effects of the intense pulsed light (IPL) rapid annealing process and back-channel passivation on the solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) array. To improve the electrical properties, stability and uniformity of IGZO TFTs, the oxide channel layers were treated by IPL at atmospheric ambient and passivated by photo-sensitive polyimide (PSPI). When we treated the IGZO channel layer by the IPL rapid annealing process, saturation field effect mobility and subthreshold swing (S.S.) were improved. And, to protect the back-channel of oxide channel layers from oxygen and water molecules, we passivated TFT devices with photo-sensitive polyimide. The IGZO TFTs on glass substrate treated by IPL rapid annealing without PSPI passivation showed the field effect mobility (<i>μ</i><sub>FE</sub>) of 1.54 cm<sup>2</sup>/Vs and subthreshold swing (S.S.) of 0.708 V/decade. The PSPI-passivated IGZO TFTs showed higher <i>μ</i><sub>FE</sub> of 2.17 cm<sup>2</sup>/Vs than that of device without passivation process and improved S.S. of 0.225 V/decade. By using a simple and fast intense pulsed light treatment with an appropriate back-channel passivation layer, we could improve the electrical characteristics and hysteresis of IGZO-TFTs. We also showed the improved uniformity of electrical characteristics for IGZO TFT devices in the area of 10 × 40 mm<sup>2</sup>. Since this IPL rapid annealing process could be performed at a low temperature, it can be applied to flexible electronics on plastic substrates in the near future. |
| first_indexed | 2024-03-10T19:45:59Z |
| format | Article |
| id | doaj.art-abe49ebbf12445b2b9a9b5352447f1d9 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T19:45:59Z |
| publishDate | 2020-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-abe49ebbf12445b2b9a9b5352447f1d92023-11-20T00:49:08ZengMDPI AGMicromachines2072-666X2020-05-0111550810.3390/mi11050508Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors ArrayHyun Jae Kim0Chul Jong Han1Byungwook Yoo2Jeongno Lee3Kimoon Lee4Kyu Hyoung Lee5Min Suk Oh6Display Research Center, Korea Electronics Technology Institute (KETI), Seongnam, Gyeonggi-do 13509, KoreaDisplay Research Center, Korea Electronics Technology Institute (KETI), Seongnam, Gyeonggi-do 13509, KoreaDisplay Research Center, Korea Electronics Technology Institute (KETI), Seongnam, Gyeonggi-do 13509, KoreaDisplay Research Center, Korea Electronics Technology Institute (KETI), Seongnam, Gyeonggi-do 13509, KoreaDepartment of Physics, Kunsan National University, Gunsan, Jeollabuk-do 54150, KoreaDepartment of Materials Science and Engineering, Yonsei University, Seoul 03722, KoreaDisplay Research Center, Korea Electronics Technology Institute (KETI), Seongnam, Gyeonggi-do 13509, KoreaWe report on the effects of the intense pulsed light (IPL) rapid annealing process and back-channel passivation on the solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) array. To improve the electrical properties, stability and uniformity of IGZO TFTs, the oxide channel layers were treated by IPL at atmospheric ambient and passivated by photo-sensitive polyimide (PSPI). When we treated the IGZO channel layer by the IPL rapid annealing process, saturation field effect mobility and subthreshold swing (S.S.) were improved. And, to protect the back-channel of oxide channel layers from oxygen and water molecules, we passivated TFT devices with photo-sensitive polyimide. The IGZO TFTs on glass substrate treated by IPL rapid annealing without PSPI passivation showed the field effect mobility (<i>μ</i><sub>FE</sub>) of 1.54 cm<sup>2</sup>/Vs and subthreshold swing (S.S.) of 0.708 V/decade. The PSPI-passivated IGZO TFTs showed higher <i>μ</i><sub>FE</sub> of 2.17 cm<sup>2</sup>/Vs than that of device without passivation process and improved S.S. of 0.225 V/decade. By using a simple and fast intense pulsed light treatment with an appropriate back-channel passivation layer, we could improve the electrical characteristics and hysteresis of IGZO-TFTs. We also showed the improved uniformity of electrical characteristics for IGZO TFT devices in the area of 10 × 40 mm<sup>2</sup>. Since this IPL rapid annealing process could be performed at a low temperature, it can be applied to flexible electronics on plastic substrates in the near future.https://www.mdpi.com/2072-666X/11/5/508thin film transistorIn-Ga-Zn-O (IGZO)solution processintense pulsed light (IPL)passivation |
| spellingShingle | Hyun Jae Kim Chul Jong Han Byungwook Yoo Jeongno Lee Kimoon Lee Kyu Hyoung Lee Min Suk Oh Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array Micromachines thin film transistor In-Ga-Zn-O (IGZO) solution process intense pulsed light (IPL) passivation |
| title | Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array |
| title_full | Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array |
| title_fullStr | Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array |
| title_full_unstemmed | Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array |
| title_short | Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array |
| title_sort | effects of intense pulsed light ipl rapid annealing and back channel passivation on solution processed in ga zn o thin film transistors array |
| topic | thin film transistor In-Ga-Zn-O (IGZO) solution process intense pulsed light (IPL) passivation |
| url | https://www.mdpi.com/2072-666X/11/5/508 |
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