Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array

Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array

We report on the effects of the intense pulsed light (IPL) rapid annealing process and back-channel passivation on the solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) array. To improve the electrical properties, stability and uniformity of IGZO TFTs, the oxide channel layers were t...

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Bibliographic Details
Main Authors: Hyun Jae Kim, Chul Jong Han, Byungwook Yoo, Jeongno Lee, Kimoon Lee, Kyu Hyoung Lee, Min Suk Oh
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Micromachines
Subjects:
thin film transistor
In-Ga-Zn-O (IGZO)
solution process
intense pulsed light (IPL)
passivation
Online Access:https://www.mdpi.com/2072-666X/11/5/508

Internet

https://www.mdpi.com/2072-666X/11/5/508

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