Investigation on Chemical Etching Process of FPCB With 18 <italic>μ</italic>m Line Pitch
Flexible printed circuit boards (FPCB) are widely used in smart devices with high wiring density and light weight. In this paper, the chemical etching process of FPCB with 18 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> lin...
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| Format: | Article |
| Language: | English |
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IEEE
2021-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9388645/ |
| _version_ | 1819067953312694272 |
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| author | Jiazheng Sheng Hui Li Shengnan Shen Ruijian Ming Bin Sun Jian Wang Daode Zhang Yinggang Tang |
| author_facet | Jiazheng Sheng Hui Li Shengnan Shen Ruijian Ming Bin Sun Jian Wang Daode Zhang Yinggang Tang |
| author_sort | Jiazheng Sheng |
| collection | DOAJ |
| description | Flexible printed circuit boards (FPCB) are widely used in smart devices with high wiring density and light weight. In this paper, the chemical etching process of FPCB with 18 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> line pitch is investigated. A geometric model of the FPCB circuit with the shape of “T” is established and simulated by the finite element method. The time evolution of the etching cavity, concentration field and velocity field of CuCl<sub>2</sub> solution are studied, as well as the effects of initial concentrations and inlet velocities on the etching cavity profile. Finally, the FPCB sample with 18 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> line pitch is successfully fabricated by employing process parameters from the etching simulation. The results show that as the increase in the etching cavity, recirculating eddies form at the bottom of the photoresist in the corners of the etching cavity, resulting in more etching on the top sides of sidewalls over time. Higher initial concentration of the etching solution will result in a larger etching cavity profile, but the inlet velocity cannot affect the etching cavity profile significantly. Finally, the effectiveness of the simulation model is verified by comparing the etching cavity profiles with four experiments. |
| first_indexed | 2024-12-21T16:26:26Z |
| format | Article |
| id | doaj.art-ac43453128ea486594a87a1a98da823a |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-21T16:26:26Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-ac43453128ea486594a87a1a98da823a2022-12-21T18:57:26ZengIEEEIEEE Access2169-35362021-01-019508725087910.1109/ACCESS.2021.30692849388645Investigation on Chemical Etching Process of FPCB With 18 <italic>μ</italic>m Line PitchJiazheng Sheng0Hui Li1https://orcid.org/0000-0002-4404-8845Shengnan Shen2https://orcid.org/0000-0002-3964-8475Ruijian Ming3https://orcid.org/0000-0003-1185-4522Bin Sun4Jian Wang5Daode Zhang6Yinggang Tang7School of Power and Mechanical Engineering, Wuhan University, Wuhan, ChinaSchool of Power and Mechanical Engineering, Wuhan University, Wuhan, ChinaSchool of Power and Mechanical Engineering, Wuhan University, Wuhan, ChinaSchool of Power and Mechanical Engineering, Wuhan University, Wuhan, ChinaJiangsu Leader-Tech Electronics Company Ltd., Pizhou, ChinaJiangsu Leader-Tech Electronics Company Ltd., Pizhou, ChinaSchool of Mechanical Engineering, Hubei University of Technology, Wuhan, ChinaSchool of Mechanical Engineering, Hubei University of Technology, Wuhan, ChinaFlexible printed circuit boards (FPCB) are widely used in smart devices with high wiring density and light weight. In this paper, the chemical etching process of FPCB with 18 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> line pitch is investigated. A geometric model of the FPCB circuit with the shape of “T” is established and simulated by the finite element method. The time evolution of the etching cavity, concentration field and velocity field of CuCl<sub>2</sub> solution are studied, as well as the effects of initial concentrations and inlet velocities on the etching cavity profile. Finally, the FPCB sample with 18 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> line pitch is successfully fabricated by employing process parameters from the etching simulation. The results show that as the increase in the etching cavity, recirculating eddies form at the bottom of the photoresist in the corners of the etching cavity, resulting in more etching on the top sides of sidewalls over time. Higher initial concentration of the etching solution will result in a larger etching cavity profile, but the inlet velocity cannot affect the etching cavity profile significantly. Finally, the effectiveness of the simulation model is verified by comparing the etching cavity profiles with four experiments.https://ieeexplore.ieee.org/document/9388645/FPCBchemical etchingtransport of diluted species |
| spellingShingle | Jiazheng Sheng Hui Li Shengnan Shen Ruijian Ming Bin Sun Jian Wang Daode Zhang Yinggang Tang Investigation on Chemical Etching Process of FPCB With 18 <italic>μ</italic>m Line Pitch IEEE Access FPCB chemical etching transport of diluted species |
| title | Investigation on Chemical Etching Process of FPCB With 18 <italic>μ</italic>m Line Pitch |
| title_full | Investigation on Chemical Etching Process of FPCB With 18 <italic>μ</italic>m Line Pitch |
| title_fullStr | Investigation on Chemical Etching Process of FPCB With 18 <italic>μ</italic>m Line Pitch |
| title_full_unstemmed | Investigation on Chemical Etching Process of FPCB With 18 <italic>μ</italic>m Line Pitch |
| title_short | Investigation on Chemical Etching Process of FPCB With 18 <italic>μ</italic>m Line Pitch |
| title_sort | investigation on chemical etching process of fpcb with 18 italic x03bc italic m line pitch |
| topic | FPCB chemical etching transport of diluted species |
| url | https://ieeexplore.ieee.org/document/9388645/ |
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