Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors
Abstract Stable all‐inorganic CsPbX3 perovskite nanocrystals (PNCs) with high optical yield can be used in combination with graphene as photon sensors with high responsivity (up to 106 A W−1) in the VIS‐UV range. The performance of these perovskite/graphene field effect transistors (FET) is mediated...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-02-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202200995 |
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| author | Nathan D. Cottam Jonathan S. Austin Chengxi Zhang Amalia Patanè Walter Escoffier Michel Goiran Mathieu Pierre Camilla Coletti Vaidotas Mišeikis Lyudmila Turyanska Oleg Makarovsky |
| author_facet | Nathan D. Cottam Jonathan S. Austin Chengxi Zhang Amalia Patanè Walter Escoffier Michel Goiran Mathieu Pierre Camilla Coletti Vaidotas Mišeikis Lyudmila Turyanska Oleg Makarovsky |
| author_sort | Nathan D. Cottam |
| collection | DOAJ |
| description | Abstract Stable all‐inorganic CsPbX3 perovskite nanocrystals (PNCs) with high optical yield can be used in combination with graphene as photon sensors with high responsivity (up to 106 A W−1) in the VIS‐UV range. The performance of these perovskite/graphene field effect transistors (FET) is mediated by charge transfer processes at the perovskite – graphene interface. Here, the effects of high electric (up to 3000 kV cm−1) and magnetic (up to 60 T) fields applied perpendicular to the graphene plane on the charge transfer are reported. The authors demonstrate electric‐ and magnetic‐field dependent charge transfer and a slow (>100 s) charge dynamics. Magneto‐transport experiments in constant (≈0.005 T s−1) and pulsed (≈1000 T s−1) magnetic fields reveal pronounced hysteresis effects in the transfer characteristics of the FET. A magnetic time is used to explain and model differences in device behavior under fast (pulsed) and slowly (continuous) changing magnetic fields. The understanding of the dynamics of the charge transfer in perovskite/graphene heterostructures developed here is relevant for exploitation of these hybrid systems in electronics and optoelectronics, including ultrasensitive photon detectors and FETs for metrology. |
| first_indexed | 2024-03-12T21:53:23Z |
| format | Article |
| id | doaj.art-ac4cfa70c35a4702b206dfcebbb91013 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-12T21:53:23Z |
| publishDate | 2023-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-ac4cfa70c35a4702b206dfcebbb910132023-07-26T01:35:30ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-02-0192n/an/a10.1002/aelm.202200995Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect TransistorsNathan D. Cottam0Jonathan S. Austin1Chengxi Zhang2Amalia Patanè3Walter Escoffier4Michel Goiran5Mathieu Pierre6Camilla Coletti7Vaidotas Mišeikis8Lyudmila Turyanska9Oleg Makarovsky10School of Physics and Astronomy University of Nottingham University Park Nottingham NG7 2RD United KingdomCentre for Additive Manufacturing Faculty of Engineering University of Nottingham Jubilee Campus Nottingham NG8 1BB United KingdomKey Laboratory of Advanced Display and System Applications Shanghai University 149 Yanchang Road Shanghai 200072 ChinaSchool of Physics and Astronomy University of Nottingham University Park Nottingham NG7 2RD United KingdomINSA Toulouse Université Paul Sabatier Université de Toulouse LNCMI UPR CNRS 3228, EMFL, 143 Avenue de Rangueil Toulouse 31400 FranceINSA Toulouse Université Paul Sabatier Université de Toulouse LNCMI UPR CNRS 3228, EMFL, 143 Avenue de Rangueil Toulouse 31400 FranceINSA Toulouse Université Paul Sabatier Université de Toulouse LNCMI UPR CNRS 3228, EMFL, 143 Avenue de Rangueil Toulouse 31400 FranceCenter for Nanotechnology Innovation @NEST Istituto Italiano di Tecnologia Piazza San Silvestro, 12 Pisa I‐56127 ItalyCenter for Nanotechnology Innovation @NEST Istituto Italiano di Tecnologia Piazza San Silvestro, 12 Pisa I‐56127 ItalyCentre for Additive Manufacturing Faculty of Engineering University of Nottingham Jubilee Campus Nottingham NG8 1BB United KingdomSchool of Physics and Astronomy University of Nottingham University Park Nottingham NG7 2RD United KingdomAbstract Stable all‐inorganic CsPbX3 perovskite nanocrystals (PNCs) with high optical yield can be used in combination with graphene as photon sensors with high responsivity (up to 106 A W−1) in the VIS‐UV range. The performance of these perovskite/graphene field effect transistors (FET) is mediated by charge transfer processes at the perovskite – graphene interface. Here, the effects of high electric (up to 3000 kV cm−1) and magnetic (up to 60 T) fields applied perpendicular to the graphene plane on the charge transfer are reported. The authors demonstrate electric‐ and magnetic‐field dependent charge transfer and a slow (>100 s) charge dynamics. Magneto‐transport experiments in constant (≈0.005 T s−1) and pulsed (≈1000 T s−1) magnetic fields reveal pronounced hysteresis effects in the transfer characteristics of the FET. A magnetic time is used to explain and model differences in device behavior under fast (pulsed) and slowly (continuous) changing magnetic fields. The understanding of the dynamics of the charge transfer in perovskite/graphene heterostructures developed here is relevant for exploitation of these hybrid systems in electronics and optoelectronics, including ultrasensitive photon detectors and FETs for metrology.https://doi.org/10.1002/aelm.202200995charge dynamicsgraphenemagnetic fieldsperovskitesUV photon detector |
| spellingShingle | Nathan D. Cottam Jonathan S. Austin Chengxi Zhang Amalia Patanè Walter Escoffier Michel Goiran Mathieu Pierre Camilla Coletti Vaidotas Mišeikis Lyudmila Turyanska Oleg Makarovsky Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors Advanced Electronic Materials charge dynamics graphene magnetic fields perovskites UV photon detector |
| title | Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors |
| title_full | Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors |
| title_fullStr | Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors |
| title_full_unstemmed | Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors |
| title_short | Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors |
| title_sort | magnetic and electric field dependent charge transfer in perovskite graphene field effect transistors |
| topic | charge dynamics graphene magnetic fields perovskites UV photon detector |
| url | https://doi.org/10.1002/aelm.202200995 |
| work_keys_str_mv | AT nathandcottam magneticandelectricfielddependentchargetransferinperovskitegraphenefieldeffecttransistors AT jonathansaustin magneticandelectricfielddependentchargetransferinperovskitegraphenefieldeffecttransistors AT chengxizhang magneticandelectricfielddependentchargetransferinperovskitegraphenefieldeffecttransistors AT amaliapatane magneticandelectricfielddependentchargetransferinperovskitegraphenefieldeffecttransistors AT walterescoffier magneticandelectricfielddependentchargetransferinperovskitegraphenefieldeffecttransistors AT michelgoiran magneticandelectricfielddependentchargetransferinperovskitegraphenefieldeffecttransistors AT mathieupierre magneticandelectricfielddependentchargetransferinperovskitegraphenefieldeffecttransistors AT camillacoletti magneticandelectricfielddependentchargetransferinperovskitegraphenefieldeffecttransistors AT vaidotasmiseikis magneticandelectricfielddependentchargetransferinperovskitegraphenefieldeffecttransistors AT lyudmilaturyanska magneticandelectricfielddependentchargetransferinperovskitegraphenefieldeffecttransistors AT olegmakarovsky magneticandelectricfielddependentchargetransferinperovskitegraphenefieldeffecttransistors |