Physicochemical fundamentals of phase formation in silicon layers implanted with oxygen and carbon
The thermodynamic and kinetic regularities of processes occurring during heat treatment in silicon layers implanted with oxygen and carbon ions have been considered. We have analyzed the regularities of silicon deformation, impurity distribution and defect formation after different annealing modes....
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2019-06-01
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| Series: | Modern Electronic Materials |
| Online Access: | https://moem.pensoft.net/article/51365/download/pdf/ |