Brightness of AlGaInAs/InP Multimode Diode Lasers with Different Aperture Widths
A set of semiconductor lasers with different stripe widths is fabricated based on the AlGaInAs/InP heterostructure with an ultra-narrow waveguide. The key characteristics of the lasers (light-current curves (L-I), current-voltage curves (I-V), and spectral and spatial characteristics) are measured,...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-10-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/20/2746 |
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| author | Yulia Kirichenko (Bobretsova) Dmitriy Veselov Alexander Klimov Sergey Slipchenko Natalia Shuvalova Andrey Lyutetsky Nikita Pikhtin Alexander Marmalyuk Vladimir Svetogorov Yuriy Ryaboshtan Maksim Ladugin |
| author_facet | Yulia Kirichenko (Bobretsova) Dmitriy Veselov Alexander Klimov Sergey Slipchenko Natalia Shuvalova Andrey Lyutetsky Nikita Pikhtin Alexander Marmalyuk Vladimir Svetogorov Yuriy Ryaboshtan Maksim Ladugin |
| author_sort | Yulia Kirichenko (Bobretsova) |
| collection | DOAJ |
| description | A set of semiconductor lasers with different stripe widths is fabricated based on the AlGaInAs/InP heterostructure with an ultra-narrow waveguide. The key characteristics of the lasers (light-current curves (L-I), current-voltage curves (I-V), and spectral and spatial characteristics) are measured, and their dependence on the stripe width is shown. The operating optical power increases from 1.4 W to 4.3 W; however, the lateral brightness decreases from 1.09 W/(mm*mrad) to 0.65 W/(mm*mrad) as the stripe width increases from 20 to 150 μm. |
| first_indexed | 2024-03-10T21:00:54Z |
| format | Article |
| id | doaj.art-ac6927ab2e574d649d6b7de2c1a6b49b |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T21:00:54Z |
| publishDate | 2023-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-ac6927ab2e574d649d6b7de2c1a6b49b2023-11-19T17:35:30ZengMDPI AGNanomaterials2079-49912023-10-011320274610.3390/nano13202746Brightness of AlGaInAs/InP Multimode Diode Lasers with Different Aperture WidthsYulia Kirichenko (Bobretsova)0Dmitriy Veselov1Alexander Klimov2Sergey Slipchenko3Natalia Shuvalova4Andrey Lyutetsky5Nikita Pikhtin6Alexander Marmalyuk7Vladimir Svetogorov8Yuriy Ryaboshtan9Maksim Ladugin10Ioffe Institute, 194021 Saint-Petersburg, RussiaIoffe Institute, 194021 Saint-Petersburg, RussiaIoffe Institute, 194021 Saint-Petersburg, RussiaIoffe Institute, 194021 Saint-Petersburg, RussiaIoffe Institute, 194021 Saint-Petersburg, RussiaIoffe Institute, 194021 Saint-Petersburg, RussiaIoffe Institute, 194021 Saint-Petersburg, RussiaSigm Plus Company, 117342 Moscow, RussiaSigm Plus Company, 117342 Moscow, RussiaSigm Plus Company, 117342 Moscow, RussiaSigm Plus Company, 117342 Moscow, RussiaA set of semiconductor lasers with different stripe widths is fabricated based on the AlGaInAs/InP heterostructure with an ultra-narrow waveguide. The key characteristics of the lasers (light-current curves (L-I), current-voltage curves (I-V), and spectral and spatial characteristics) are measured, and their dependence on the stripe width is shown. The operating optical power increases from 1.4 W to 4.3 W; however, the lateral brightness decreases from 1.09 W/(mm*mrad) to 0.65 W/(mm*mrad) as the stripe width increases from 20 to 150 μm.https://www.mdpi.com/2079-4991/13/20/2746AlGaInAs/InP heterostructureultra-narrow waveguidelateral brightnessoptical power |
| spellingShingle | Yulia Kirichenko (Bobretsova) Dmitriy Veselov Alexander Klimov Sergey Slipchenko Natalia Shuvalova Andrey Lyutetsky Nikita Pikhtin Alexander Marmalyuk Vladimir Svetogorov Yuriy Ryaboshtan Maksim Ladugin Brightness of AlGaInAs/InP Multimode Diode Lasers with Different Aperture Widths Nanomaterials AlGaInAs/InP heterostructure ultra-narrow waveguide lateral brightness optical power |
| title | Brightness of AlGaInAs/InP Multimode Diode Lasers with Different Aperture Widths |
| title_full | Brightness of AlGaInAs/InP Multimode Diode Lasers with Different Aperture Widths |
| title_fullStr | Brightness of AlGaInAs/InP Multimode Diode Lasers with Different Aperture Widths |
| title_full_unstemmed | Brightness of AlGaInAs/InP Multimode Diode Lasers with Different Aperture Widths |
| title_short | Brightness of AlGaInAs/InP Multimode Diode Lasers with Different Aperture Widths |
| title_sort | brightness of algainas inp multimode diode lasers with different aperture widths |
| topic | AlGaInAs/InP heterostructure ultra-narrow waveguide lateral brightness optical power |
| url | https://www.mdpi.com/2079-4991/13/20/2746 |
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