Role of Metallic Adlayer in Limiting Ge Incorporation into GaN

Role of Metallic Adlayer in Limiting Ge Incorporation into GaN

Atomically thin metal adlayers are used as surfactants in semiconductor crystal growth. The role of the adlayer in the incorporation of dopants in GaN is completely unexplored, probably because <i>n</i>-type doping of GaN with Si is relatively straightforward and can be scaled up with av...

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Bibliographic Details
Main Authors: Henryk Turski, Pawel Wolny, Mikolaj Chlipala, Marta Sawicka, Anna Reszka, Pawel Kempisty, Leszek Konczewicz, Grzegorz Muziol, Marcin Siekacz, Czeslaw Skierbiszewski
Format: Article
Language:English
Published: MDPI AG 2022-08-01
Series:Materials
Subjects:
doping
molecular beam epitaxy
surfactant
nitrides
Online Access:https://www.mdpi.com/1996-1944/15/17/5929

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