Analysis of Ruggedness of 4H-SiC Power MOSFETs with Various Doping Parameters
This work investigates the effect of the doping concentration of SiC power metal-oxide–semiconductor field-effect transistors (MOSFETs) under an unclamped inductive switching (UIS) condition. Switching circuits such as inverters and motor-drive circuits often face unexpected operating conditions; th...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-12-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/13/1/427 |