High resolution X-ray diffraction study of proton irradiated silicon crystals
Radiation-induced modification of semiconductors is achieved by controlled introduction of intrinsic structural and impurity defects. Conventionally, introduction of radiation-induced defects is used as an efficient tool for controlling the lifetime of metastable carriers in local areas of silicon b...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2016-03-01
|
| Series: | Modern Electronic Materials |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177916300470 |
| _version_ | 1827850740274561024 |
|---|---|
| author | Igor S. Smirnov Irina G. Dyachkova Elena G. Novoselova |
| author_facet | Igor S. Smirnov Irina G. Dyachkova Elena G. Novoselova |
| author_sort | Igor S. Smirnov |
| collection | DOAJ |
| description | Radiation-induced modification of semiconductors is achieved by controlled introduction of intrinsic structural and impurity defects. Conventionally, introduction of radiation-induced defects is used as an efficient tool for controlling the lifetime of metastable carriers in local areas of silicon based devices and supporting mechanisms of avalanche-like breakdown through radiation-induced defect levels. Desired parameters of damaged layers are typically achieved during post-implantation heat treatment. There are recent applications of proton irradiation in silicon technology. A significant growth of luminescence was observed in proton irradiated silicon and attributed to the formation of special rod-shaped clusters of interstitial type radiation defects.
We have studied the transformation of radiation-induced defects forming as a result of proton implantation into n silicon crystals with a resistivity of 100 Ω cm using high resolution X-ray diffraction and shown that sequential implantation of 100, 200 and 300 keV protons with a fluence of 2.1016 cm−2 causes the formation of a 2.4 μm thick damaged layer with a greater lattice parameter. The layer forms simultaneously with intrinsic clusters of vacancy and interstitial type radiation-induced defects. Vacuum annealing of the irradiated crystals at 600 °C increases the power of the radiation-induced defects of both types and reduces their quantity. Interstitial type defects dominate after annealing at 1100 °C. We have assessed the power of the defects at every transformation stage. |
| first_indexed | 2024-03-12T10:22:53Z |
| format | Article |
| id | doaj.art-ad047768cd084f95be47b007cfd781d5 |
| institution | Directory Open Access Journal |
| issn | 2452-1779 |
| language | English |
| last_indexed | 2024-03-12T10:22:53Z |
| publishDate | 2016-03-01 |
| publisher | Pensoft Publishers |
| record_format | Article |
| series | Modern Electronic Materials |
| spelling | doaj.art-ad047768cd084f95be47b007cfd781d52023-09-02T09:58:19ZengPensoft PublishersModern Electronic Materials2452-17792016-03-0121293210.1016/j.moem.2016.08.005High resolution X-ray diffraction study of proton irradiated silicon crystalsIgor S. SmirnovIrina G. DyachkovaElena G. NovoselovaRadiation-induced modification of semiconductors is achieved by controlled introduction of intrinsic structural and impurity defects. Conventionally, introduction of radiation-induced defects is used as an efficient tool for controlling the lifetime of metastable carriers in local areas of silicon based devices and supporting mechanisms of avalanche-like breakdown through radiation-induced defect levels. Desired parameters of damaged layers are typically achieved during post-implantation heat treatment. There are recent applications of proton irradiation in silicon technology. A significant growth of luminescence was observed in proton irradiated silicon and attributed to the formation of special rod-shaped clusters of interstitial type radiation defects. We have studied the transformation of radiation-induced defects forming as a result of proton implantation into n silicon crystals with a resistivity of 100 Ω cm using high resolution X-ray diffraction and shown that sequential implantation of 100, 200 and 300 keV protons with a fluence of 2.1016 cm−2 causes the formation of a 2.4 μm thick damaged layer with a greater lattice parameter. The layer forms simultaneously with intrinsic clusters of vacancy and interstitial type radiation-induced defects. Vacuum annealing of the irradiated crystals at 600 °C increases the power of the radiation-induced defects of both types and reduces their quantity. Interstitial type defects dominate after annealing at 1100 °C. We have assessed the power of the defects at every transformation stage.http://www.sciencedirect.com/science/article/pii/S2452177916300470SiliconH+ implantationAnnealingHigh-resolution X-ray diffractometry |
| spellingShingle | Igor S. Smirnov Irina G. Dyachkova Elena G. Novoselova High resolution X-ray diffraction study of proton irradiated silicon crystals Modern Electronic Materials Silicon H+ implantation Annealing High-resolution X-ray diffractometry |
| title | High resolution X-ray diffraction study of proton irradiated silicon crystals |
| title_full | High resolution X-ray diffraction study of proton irradiated silicon crystals |
| title_fullStr | High resolution X-ray diffraction study of proton irradiated silicon crystals |
| title_full_unstemmed | High resolution X-ray diffraction study of proton irradiated silicon crystals |
| title_short | High resolution X-ray diffraction study of proton irradiated silicon crystals |
| title_sort | high resolution x ray diffraction study of proton irradiated silicon crystals |
| topic | Silicon H+ implantation Annealing High-resolution X-ray diffractometry |
| url | http://www.sciencedirect.com/science/article/pii/S2452177916300470 |
| work_keys_str_mv | AT igorssmirnov highresolutionxraydiffractionstudyofprotonirradiatedsiliconcrystals AT irinagdyachkova highresolutionxraydiffractionstudyofprotonirradiatedsiliconcrystals AT elenagnovoselova highresolutionxraydiffractionstudyofprotonirradiatedsiliconcrystals |