Electrical and Photoelectrical Properties of Reduced Graphene Oxide—Porous Silicon Nanostructures
Abstract In this work, the hybrid structures were created by electrochemical etching of silicon wafer and deposition of reduced graphene oxide (RGO) on the porous silicon (PS) layer. With the help of SEM and AFM, the formation of hybrid PS–RGO structure was confirmed. By means of current–voltage cha...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2017-04-01
|
| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-017-2043-7 |
| _version_ | 1797764739918462976 |
|---|---|
| author | Igor B. Olenych Olena I. Aksimentyeva Liubomyr S. Monastyrskii Yulia Yu. Horbenko Maryan V. Partyka |
| author_facet | Igor B. Olenych Olena I. Aksimentyeva Liubomyr S. Monastyrskii Yulia Yu. Horbenko Maryan V. Partyka |
| author_sort | Igor B. Olenych |
| collection | DOAJ |
| description | Abstract In this work, the hybrid structures were created by electrochemical etching of silicon wafer and deposition of reduced graphene oxide (RGO) on the porous silicon (PS) layer. With the help of SEM and AFM, the formation of hybrid PS–RGO structure was confirmed. By means of current–voltage characteristic analysis and impedance spectroscopy, we studied electrical characteristics of PS–RGO structures. The formation of photosensitive electrical barriers in hybrid structures was revealed. Temporal parameters and spectral characteristics of photoresponse in the 400–1100-nm wavelength range were investigated. The widening of spectral range of photosensitivity of the hybrid structures in short-wavelength range in comparison with single-crystal silicon was revealed. The obtained results broaden the prospects of application of the PS–RGO structures in photoelectronics. |
| first_indexed | 2024-03-12T20:00:05Z |
| format | Article |
| id | doaj.art-ad09915c7291456ab705d3fdf3462d55 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T20:00:05Z |
| publishDate | 2017-04-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-ad09915c7291456ab705d3fdf3462d552023-08-02T02:29:07ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2017-04-011211710.1186/s11671-017-2043-7Electrical and Photoelectrical Properties of Reduced Graphene Oxide—Porous Silicon NanostructuresIgor B. Olenych0Olena I. Aksimentyeva1Liubomyr S. Monastyrskii2Yulia Yu. Horbenko3Maryan V. Partyka4Department of Electronics and Computer Technologies (Сhair of Radioelectronics and Computer Systems), Ivan Franko National University of LvivPhysical and Colloidal Chemistry Department, Ivan Franko National University of LvivDepartment of Electronics and Computer Technologies (Сhair of Radioelectronics and Computer Systems), Ivan Franko National University of LvivPhysical and Colloidal Chemistry Department, Ivan Franko National University of LvivSolid State Physics Department, Ivan Franko National University of LvivAbstract In this work, the hybrid structures were created by electrochemical etching of silicon wafer and deposition of reduced graphene oxide (RGO) on the porous silicon (PS) layer. With the help of SEM and AFM, the formation of hybrid PS–RGO structure was confirmed. By means of current–voltage characteristic analysis and impedance spectroscopy, we studied electrical characteristics of PS–RGO structures. The formation of photosensitive electrical barriers in hybrid structures was revealed. Temporal parameters and spectral characteristics of photoresponse in the 400–1100-nm wavelength range were investigated. The widening of spectral range of photosensitivity of the hybrid structures in short-wavelength range in comparison with single-crystal silicon was revealed. The obtained results broaden the prospects of application of the PS–RGO structures in photoelectronics.http://link.springer.com/article/10.1186/s11671-017-2043-7Porous siliconReduced graphene oxideHybrid structurePhotosensitivityCurrent–voltage characteristicsImpedance spectroscopy |
| spellingShingle | Igor B. Olenych Olena I. Aksimentyeva Liubomyr S. Monastyrskii Yulia Yu. Horbenko Maryan V. Partyka Electrical and Photoelectrical Properties of Reduced Graphene Oxide—Porous Silicon Nanostructures Nanoscale Research Letters Porous silicon Reduced graphene oxide Hybrid structure Photosensitivity Current–voltage characteristics Impedance spectroscopy |
| title | Electrical and Photoelectrical Properties of Reduced Graphene Oxide—Porous Silicon Nanostructures |
| title_full | Electrical and Photoelectrical Properties of Reduced Graphene Oxide—Porous Silicon Nanostructures |
| title_fullStr | Electrical and Photoelectrical Properties of Reduced Graphene Oxide—Porous Silicon Nanostructures |
| title_full_unstemmed | Electrical and Photoelectrical Properties of Reduced Graphene Oxide—Porous Silicon Nanostructures |
| title_short | Electrical and Photoelectrical Properties of Reduced Graphene Oxide—Porous Silicon Nanostructures |
| title_sort | electrical and photoelectrical properties of reduced graphene oxide porous silicon nanostructures |
| topic | Porous silicon Reduced graphene oxide Hybrid structure Photosensitivity Current–voltage characteristics Impedance spectroscopy |
| url | http://link.springer.com/article/10.1186/s11671-017-2043-7 |
| work_keys_str_mv | AT igorbolenych electricalandphotoelectricalpropertiesofreducedgrapheneoxideporoussiliconnanostructures AT olenaiaksimentyeva electricalandphotoelectricalpropertiesofreducedgrapheneoxideporoussiliconnanostructures AT liubomyrsmonastyrskii electricalandphotoelectricalpropertiesofreducedgrapheneoxideporoussiliconnanostructures AT yuliayuhorbenko electricalandphotoelectricalpropertiesofreducedgrapheneoxideporoussiliconnanostructures AT maryanvpartyka electricalandphotoelectricalpropertiesofreducedgrapheneoxideporoussiliconnanostructures |