Electrical and Optical Properties of Laser-Induced Structural Modifications in PbSe Films
PbSe chalcogenide films are widely used as photosensitive elements in gas analysis devices. High absorption in the IR spectrum region and low electrical resistance are important characteristics. Continuous laser radiation exposure of films in the near UV range makes it possible to achieve the desire...
Main Authors: | Anastasiia A. Olkhova, Alina A. Patrikeeva, Maksim M. Sergeev |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-10-01
|
Series: | Applied Sciences |
Subjects: | |
Online Access: | https://www.mdpi.com/2076-3417/12/19/10162 |
Similar Items
-
Comparison of CW NUV and Pulse NIR Laser Influence on PbSe Films Photosensitivity
by: Anastasiia A. Olkhova, et al.
Published: (2023-02-01) -
Laser-induced thermal effect on the electrical characteristics of photosensitive PbSe films
by: Anastasiia A. Olkhova, et al.
Published: (2024-02-01) -
Hot exciton cooling and multiple exciton generation in PbSe quantum dots
by: Kumar, Manoj, et al.
Published: (2017) -
Electron Paramagnetic Resonance Study of PbSe, PbTe, and PbTe:In Semiconductors Obtained by the Pulsed Laser Deposition Method
by: Aleksandra Wędrychowicz, et al.
Published: (2022-07-01) -
Soft phonon modes from off-center Ge atoms lead to ultralow thermal conductivity and superior thermoelectric performance in n-type PbSe–GeSe
by: Luo, Zhong-Zhen, et al.
Published: (2020)