Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity
Radiation measurements are critical in radioanalytical, nuclear chemistry, and biomedical physics. Continuous advancement in developing economical, sensitive, and compact devices designed to detect and measure radiation has increased its capability in many applications. In this work, we presented an...
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MDPI AG
2023-02-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/13/2/314 |
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| author | Amal Mohamed Ahmed Ali Naser M. Ahmed Norlaili A. Kabir Natheer A. Algadri Ahmad M. AL-Diabat I. A. Wadi Ahmed Alsadig Osamah A. Aldaghri Khalid H. Ibnaouf |
| author_facet | Amal Mohamed Ahmed Ali Naser M. Ahmed Norlaili A. Kabir Natheer A. Algadri Ahmad M. AL-Diabat I. A. Wadi Ahmed Alsadig Osamah A. Aldaghri Khalid H. Ibnaouf |
| author_sort | Amal Mohamed Ahmed Ali |
| collection | DOAJ |
| description | Radiation measurements are critical in radioanalytical, nuclear chemistry, and biomedical physics. Continuous advancement in developing economical, sensitive, and compact devices designed to detect and measure radiation has increased its capability in many applications. In this work, we presented and investigated the performance of a cost-effective X-ray radiation detector based on the extended gate field effect transistors (EGFET). We examined the sensitivity of Al-doped Zinc oxide (AZO) of varying thicknesses, fabricated by chemical bath deposition (CBD), following X-ray irradiation with low and high doses. EGFETs were used to connect samples for their detection capabilities. As a function of the absorbed dose, the response was analyzed based on the threshold voltage shift, and the sensitivity of each device was also evaluated. We demonstrated that thin films are less sensitive to radiation than their disk-type EG devices. However, performance aspects of the devices, such as radiation exposure sensitivity and active dosage region, were found to be significantly reliant on the composition and thickness of the materials used. These structures may be a cost-effective alternative for real-time, room-temperature radiation detectors. |
| first_indexed | 2024-03-11T08:58:09Z |
| format | Article |
| id | doaj.art-ad2b20ff45154e748e0694b14eda6d8a |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T08:58:09Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-ad2b20ff45154e748e0694b14eda6d8a2023-11-16T19:56:30ZengMDPI AGCrystals2073-43522023-02-0113231410.3390/cryst13020314Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide SensitivityAmal Mohamed Ahmed Ali0Naser M. Ahmed1Norlaili A. Kabir2Natheer A. Algadri3Ahmad M. AL-Diabat4I. A. Wadi5Ahmed Alsadig6Osamah A. Aldaghri7Khalid H. Ibnaouf8School of Physics, Universiti Sains Malaysia, Gelugor 11800, Penang, MalaysiaSchool of Physics, Universiti Sains Malaysia, Gelugor 11800, Penang, MalaysiaSchool of Physics, Universiti Sains Malaysia, Gelugor 11800, Penang, MalaysiaDepartment of Physics, Isra University, Amman 00964, JordanDepartment of Physics, Al-Zaytoonah University of Jordan, Amman 11733, JordanPreparatory Year Unit, Prince Sattam Bin Abdulaziz University, Alkharj 16273, Saudi ArabiaCNR NANOTEC, Institute of Nanotechnology, Via Monteroni, 73100 Lecce, ItalyDepartment of Physics, College of Science, Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh 13318, Saudi ArabiaDepartment of Physics, College of Science, Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh 13318, Saudi ArabiaRadiation measurements are critical in radioanalytical, nuclear chemistry, and biomedical physics. Continuous advancement in developing economical, sensitive, and compact devices designed to detect and measure radiation has increased its capability in many applications. In this work, we presented and investigated the performance of a cost-effective X-ray radiation detector based on the extended gate field effect transistors (EGFET). We examined the sensitivity of Al-doped Zinc oxide (AZO) of varying thicknesses, fabricated by chemical bath deposition (CBD), following X-ray irradiation with low and high doses. EGFETs were used to connect samples for their detection capabilities. As a function of the absorbed dose, the response was analyzed based on the threshold voltage shift, and the sensitivity of each device was also evaluated. We demonstrated that thin films are less sensitive to radiation than their disk-type EG devices. However, performance aspects of the devices, such as radiation exposure sensitivity and active dosage region, were found to be significantly reliant on the composition and thickness of the materials used. These structures may be a cost-effective alternative for real-time, room-temperature radiation detectors.https://www.mdpi.com/2073-4352/13/2/314X-rays sensorAl-doped zinc oxideEGFETthin filmsMOSFET |
| spellingShingle | Amal Mohamed Ahmed Ali Naser M. Ahmed Norlaili A. Kabir Natheer A. Algadri Ahmad M. AL-Diabat I. A. Wadi Ahmed Alsadig Osamah A. Aldaghri Khalid H. Ibnaouf Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity Crystals X-rays sensor Al-doped zinc oxide EGFET thin films MOSFET |
| title | Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity |
| title_full | Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity |
| title_fullStr | Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity |
| title_full_unstemmed | Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity |
| title_short | Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity |
| title_sort | towards extended gate field effect transistor based radiation sensors impact of thicknesses and radiation doses on al doped zinc oxide sensitivity |
| topic | X-rays sensor Al-doped zinc oxide EGFET thin films MOSFET |
| url | https://www.mdpi.com/2073-4352/13/2/314 |
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