Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity

Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity

Radiation measurements are critical in radioanalytical, nuclear chemistry, and biomedical physics. Continuous advancement in developing economical, sensitive, and compact devices designed to detect and measure radiation has increased its capability in many applications. In this work, we presented an...

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Bibliographic Details
Main Authors: Amal Mohamed Ahmed Ali, Naser M. Ahmed, Norlaili A. Kabir, Natheer A. Algadri, Ahmad M. AL-Diabat, I. A. Wadi, Ahmed Alsadig, Osamah A. Aldaghri, Khalid H. Ibnaouf
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Crystals
Subjects:
X-rays sensor
Al-doped zinc oxide
EGFET
thin films
MOSFET
Online Access:https://www.mdpi.com/2073-4352/13/2/314

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