Ab initio investigation of electronic and magnetic properties of antiferromagnetic/ferroelectric LaMnO3/BaTiO3 interface

We investigate the structural, electronic and magnetic properties of LaMnO _3 /BaTiO _3 heterostructure by means of ab initio calculations within the GGA+ U approach. We consider the heterostructure when ferroelectric polarization in the BaTiO _3 film is oriented perpendicular to the LaMnO _3 substr...

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Bibliographic Details
Main Authors: V V Kabanov, I I Piyanzina, Yu V Lysogorskiy, D A Tayurskii, R F Mamin
Format: Article
Language:English
Published: IOP Publishing 2020-01-01
Series:Materials Research Express
Subjects:
Online Access:https://doi.org/10.1088/2053-1591/ab940e
Description
Summary:We investigate the structural, electronic and magnetic properties of LaMnO _3 /BaTiO _3 heterostructure by means of ab initio calculations within the GGA+ U approach. We consider the heterostructure when ferroelectric polarization in the BaTiO _3 film is oriented perpendicular to the LaMnO _3 substrate. We present atom and spin-resolved density of states calculations for LaMnO _3 /BaTiO _3 heterostructure with different number of BaTiO _3 overlayers as well as layer-resolved spectra for the conducting heterostructure. We found that the LaMnO _3 /BaTiO _3 heterostructure becomes conducting with a significant spin polarization indicating that the interface becomes ferromagnetically ordered. The propose concept of a ferroelectrically controlled interface ferromagnetism that offers the possibility to design novel electronic devices.
ISSN:2053-1591