Annihilation and Generation of Dislocations by Irradiation by Ions and Electrons in Strontium Titanate Single Crystal

The physical and chemical properties of many oxide materials depend strongly on their defect concentration, which gives rise to unique electronic, optical, and dielectric properties. One such promising material for various applications, including energy storage, photocatalysis, and electronics, is S...

Full description

Bibliographic Details
Main Authors: Marcin Wojtyniak, Christian Rodenbücher, Benedykt R. Jany, Grzegorz Cempura, Adam Kruk, Franciszek Krok, Krzysztof Szot
Format: Article
Language:English
Published: MDPI AG 2023-08-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/13/8/1259
_version_ 1797585062995165184
author Marcin Wojtyniak
Christian Rodenbücher
Benedykt R. Jany
Grzegorz Cempura
Adam Kruk
Franciszek Krok
Krzysztof Szot
author_facet Marcin Wojtyniak
Christian Rodenbücher
Benedykt R. Jany
Grzegorz Cempura
Adam Kruk
Franciszek Krok
Krzysztof Szot
author_sort Marcin Wojtyniak
collection DOAJ
description The physical and chemical properties of many oxide materials depend strongly on their defect concentration, which gives rise to unique electronic, optical, and dielectric properties. One such promising material for various applications, including energy storage, photocatalysis, and electronics, is SrTiO<sub>3</sub> (STO). It exhibits several interesting phenomena, including a metal-to-insulator transition that can be induced by reduction. By extension, 1-D defects, such as dislocations, play a significant role in its electronic properties. Thus, we investigate the process of dislocation movement, its creation, and annihilation under two stimuli: ion thinning and electron irradiation. First, we designed and produced a lamella from a mechanically modified sample with variable thickness in the form of a wedge using a focused ion beam (FIB/Ga<sup>+</sup>) to investigate thickness-dependent dislocation movement. The lamella was investigated by transmission electron microscopy, allowing for the measurements of dislocation concentration as a function of its thickness. We have noticed a sharp decrease in the defect concentration with respect to the starting sample, showing a process of annihilation of dislocations. Second, we used an electron beam to drive a relatively large current into the STO surface. This experiment produced an electrical breakdown-like pattern. Optical and atomic force microscopy revealed that this pattern evolved due to the removal of material from the surface and local metal-insulator-transition along the dislocations network. Thus, we observe the dislocations generation and movement.
first_indexed 2024-03-11T00:01:33Z
format Article
id doaj.art-ad77e537f695477992385cdc3e45c27d
institution Directory Open Access Journal
issn 2073-4352
language English
last_indexed 2024-03-11T00:01:33Z
publishDate 2023-08-01
publisher MDPI AG
record_format Article
series Crystals
spelling doaj.art-ad77e537f695477992385cdc3e45c27d2023-11-19T00:45:39ZengMDPI AGCrystals2073-43522023-08-01138125910.3390/cryst13081259Annihilation and Generation of Dislocations by Irradiation by Ions and Electrons in Strontium Titanate Single CrystalMarcin Wojtyniak0Christian Rodenbücher1Benedykt R. Jany2Grzegorz Cempura3Adam Kruk4Franciszek Krok5Krzysztof Szot6Institute of Physics—Center for Science and Education, Silesian University of Technology, Krasińskiego 8 Street, 40-019 Katowice, PolandInstitute of Energy and Climate Research (IEK-14), Forschungszentrum Jülich GmbH, 52425 Jülich, GermanyMarian Smoluchowski Institute of Physics, Faculty of Physics, Astronomy and Applied Computer Science, Jagiellonian University, Lojasiewicza 11, 30-348 Krakow, PolandInternational Centre of Electron Microscopy for Materials Science, Faculty of Metals Engineering and Industrial Computer Science, AGH University of Science and Technology, 30-059 Krakow, PolandInternational Centre of Electron Microscopy for Materials Science, Faculty of Metals Engineering and Industrial Computer Science, AGH University of Science and Technology, 30-059 Krakow, PolandMarian Smoluchowski Institute of Physics, Faculty of Physics, Astronomy and Applied Computer Science, Jagiellonian University, Lojasiewicza 11, 30-348 Krakow, PolandA. Chełkowski Institute of Physics, University of Silesia, 41-500 Chorzów, PolandThe physical and chemical properties of many oxide materials depend strongly on their defect concentration, which gives rise to unique electronic, optical, and dielectric properties. One such promising material for various applications, including energy storage, photocatalysis, and electronics, is SrTiO<sub>3</sub> (STO). It exhibits several interesting phenomena, including a metal-to-insulator transition that can be induced by reduction. By extension, 1-D defects, such as dislocations, play a significant role in its electronic properties. Thus, we investigate the process of dislocation movement, its creation, and annihilation under two stimuli: ion thinning and electron irradiation. First, we designed and produced a lamella from a mechanically modified sample with variable thickness in the form of a wedge using a focused ion beam (FIB/Ga<sup>+</sup>) to investigate thickness-dependent dislocation movement. The lamella was investigated by transmission electron microscopy, allowing for the measurements of dislocation concentration as a function of its thickness. We have noticed a sharp decrease in the defect concentration with respect to the starting sample, showing a process of annihilation of dislocations. Second, we used an electron beam to drive a relatively large current into the STO surface. This experiment produced an electrical breakdown-like pattern. Optical and atomic force microscopy revealed that this pattern evolved due to the removal of material from the surface and local metal-insulator-transition along the dislocations network. Thus, we observe the dislocations generation and movement.https://www.mdpi.com/2073-4352/13/8/1259strontium titanateextended defectsdislocation concentration
spellingShingle Marcin Wojtyniak
Christian Rodenbücher
Benedykt R. Jany
Grzegorz Cempura
Adam Kruk
Franciszek Krok
Krzysztof Szot
Annihilation and Generation of Dislocations by Irradiation by Ions and Electrons in Strontium Titanate Single Crystal
Crystals
strontium titanate
extended defects
dislocation concentration
title Annihilation and Generation of Dislocations by Irradiation by Ions and Electrons in Strontium Titanate Single Crystal
title_full Annihilation and Generation of Dislocations by Irradiation by Ions and Electrons in Strontium Titanate Single Crystal
title_fullStr Annihilation and Generation of Dislocations by Irradiation by Ions and Electrons in Strontium Titanate Single Crystal
title_full_unstemmed Annihilation and Generation of Dislocations by Irradiation by Ions and Electrons in Strontium Titanate Single Crystal
title_short Annihilation and Generation of Dislocations by Irradiation by Ions and Electrons in Strontium Titanate Single Crystal
title_sort annihilation and generation of dislocations by irradiation by ions and electrons in strontium titanate single crystal
topic strontium titanate
extended defects
dislocation concentration
url https://www.mdpi.com/2073-4352/13/8/1259
work_keys_str_mv AT marcinwojtyniak annihilationandgenerationofdislocationsbyirradiationbyionsandelectronsinstrontiumtitanatesinglecrystal
AT christianrodenbucher annihilationandgenerationofdislocationsbyirradiationbyionsandelectronsinstrontiumtitanatesinglecrystal
AT benedyktrjany annihilationandgenerationofdislocationsbyirradiationbyionsandelectronsinstrontiumtitanatesinglecrystal
AT grzegorzcempura annihilationandgenerationofdislocationsbyirradiationbyionsandelectronsinstrontiumtitanatesinglecrystal
AT adamkruk annihilationandgenerationofdislocationsbyirradiationbyionsandelectronsinstrontiumtitanatesinglecrystal
AT franciszekkrok annihilationandgenerationofdislocationsbyirradiationbyionsandelectronsinstrontiumtitanatesinglecrystal
AT krzysztofszot annihilationandgenerationofdislocationsbyirradiationbyionsandelectronsinstrontiumtitanatesinglecrystal