Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure
Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition c...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-11-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0119654 |
| _version_ | 1797947417080889344 |
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| author | Xuejing Wang Yung-Chen Lin Chia-Tse Tai Seok Woo Lee Tzu-Ming Lu Sun Hae Ra Shin Sadhvikas J. Addamane Chris Sheehan Jiun-Yun Li Yerim Kim Jinkyoung Yoo |
| author_facet | Xuejing Wang Yung-Chen Lin Chia-Tse Tai Seok Woo Lee Tzu-Ming Lu Sun Hae Ra Shin Sadhvikas J. Addamane Chris Sheehan Jiun-Yun Li Yerim Kim Jinkyoung Yoo |
| author_sort | Xuejing Wang |
| collection | DOAJ |
| description | Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor–liquid–solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current–voltage (Id–Vg) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design. |
| first_indexed | 2024-04-10T21:27:28Z |
| format | Article |
| id | doaj.art-ad8c45cce7ab47de825cb508b9a195ff |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-04-10T21:27:28Z |
| publishDate | 2022-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-ad8c45cce7ab47de825cb508b9a195ff2023-01-19T16:28:28ZengAIP Publishing LLCAPL Materials2166-532X2022-11-011011111108111108-710.1063/5.0119654Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructureXuejing Wang0Yung-Chen Lin1Chia-Tse Tai2Seok Woo Lee3Tzu-Ming Lu4Sun Hae Ra Shin5Sadhvikas J. Addamane6Chris Sheehan7Jiun-Yun Li8Yerim Kim9Jinkyoung Yoo10Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USACenter for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USAGraduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, TaiwanSchool of Electrical and Electronic Engineering, Nanyang Technological University, 639798, SingaporeCenter for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87123, USACenter for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USACenter for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87123, USACenter for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USAGraduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, TaiwanCenter for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USACenter for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USARealizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor–liquid–solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current–voltage (Id–Vg) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design.http://dx.doi.org/10.1063/5.0119654 |
| spellingShingle | Xuejing Wang Yung-Chen Lin Chia-Tse Tai Seok Woo Lee Tzu-Ming Lu Sun Hae Ra Shin Sadhvikas J. Addamane Chris Sheehan Jiun-Yun Li Yerim Kim Jinkyoung Yoo Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure APL Materials |
| title | Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure |
| title_full | Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure |
| title_fullStr | Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure |
| title_full_unstemmed | Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure |
| title_short | Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure |
| title_sort | formation of tubular conduction channel in a sige p si core shell nanowire heterostructure |
| url | http://dx.doi.org/10.1063/5.0119654 |
| work_keys_str_mv | AT xuejingwang formationoftubularconductionchannelinasigepsicoreshellnanowireheterostructure AT yungchenlin formationoftubularconductionchannelinasigepsicoreshellnanowireheterostructure AT chiatsetai formationoftubularconductionchannelinasigepsicoreshellnanowireheterostructure AT seokwoolee formationoftubularconductionchannelinasigepsicoreshellnanowireheterostructure AT tzuminglu formationoftubularconductionchannelinasigepsicoreshellnanowireheterostructure AT sunhaerashin formationoftubularconductionchannelinasigepsicoreshellnanowireheterostructure AT sadhvikasjaddamane formationoftubularconductionchannelinasigepsicoreshellnanowireheterostructure AT chrissheehan formationoftubularconductionchannelinasigepsicoreshellnanowireheterostructure AT jiunyunli formationoftubularconductionchannelinasigepsicoreshellnanowireheterostructure AT yerimkim formationoftubularconductionchannelinasigepsicoreshellnanowireheterostructure AT jinkyoungyoo formationoftubularconductionchannelinasigepsicoreshellnanowireheterostructure |