Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes
Abstract Temperature dependence of the low‐frequency electronic noise in NiOx/β‐Ga2O3 p–n heterojunction diodes is reported. The noise spectral density is of the 1/f‐type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is t...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-02-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300501 |
| _version_ | 1797294353145659392 |
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| author | Subhajit Ghosh Dinusha Herath Mudiyanselage Fariborz Kargar Yuji Zhao Houqiang Fu Alexander A. Balandin |
| author_facet | Subhajit Ghosh Dinusha Herath Mudiyanselage Fariborz Kargar Yuji Zhao Houqiang Fu Alexander A. Balandin |
| author_sort | Subhajit Ghosh |
| collection | DOAJ |
| description | Abstract Temperature dependence of the low‐frequency electronic noise in NiOx/β‐Ga2O3 p–n heterojunction diodes is reported. The noise spectral density is of the 1/f‐type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is the frequency). It is observed that there is an intriguing non‐monotonic dependence of the noise on temperature near T = 380 K. The Raman spectroscopy of the device structure suggests material changes, which results in reduced noise above this temperature. The normalized noise spectral density in such diodes is determined to be on the order of 10−14 cm2 Hz−1 (f = 10 Hz) at 0.1 A cm−2 current density. In terms of the noise level, NiOx/β‐Ga2O3 p–n diodes perform excellently for new technology and occupy an intermediate position among devices of various designs implemented with different ultra‐wide‐bandgap semiconductors. The obtained results are important for understanding the electronic properties of NiOx/β‐Ga2O3 heterojunctions and contribute to the development of noise spectroscopy as the quality assessment tool for new electronic materials and device technologies. |
| first_indexed | 2024-03-07T21:28:59Z |
| format | Article |
| id | doaj.art-adb2ac88d301499584ed29e9fe92b986 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-07T21:28:59Z |
| publishDate | 2024-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-adb2ac88d301499584ed29e9fe92b9862024-02-27T04:06:06ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-02-01102n/an/a10.1002/aelm.202300501Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction DiodesSubhajit Ghosh0Dinusha Herath Mudiyanselage1Fariborz Kargar2Yuji Zhao3Houqiang Fu4Alexander A. Balandin5Department of Materials Science and Engineering University of California Los Angeles CA 90095 USASchool of Electrical, Computer, and Energy Engineering Arizona State University Tempe AZ 85287 USADepartment of Materials Science and Engineering University of California Los Angeles CA 90095 USADepartment of Electrical and Computer Engineering Rice University Houston TX 77005 USASchool of Electrical, Computer, and Energy Engineering Arizona State University Tempe AZ 85287 USADepartment of Materials Science and Engineering University of California Los Angeles CA 90095 USAAbstract Temperature dependence of the low‐frequency electronic noise in NiOx/β‐Ga2O3 p–n heterojunction diodes is reported. The noise spectral density is of the 1/f‐type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is the frequency). It is observed that there is an intriguing non‐monotonic dependence of the noise on temperature near T = 380 K. The Raman spectroscopy of the device structure suggests material changes, which results in reduced noise above this temperature. The normalized noise spectral density in such diodes is determined to be on the order of 10−14 cm2 Hz−1 (f = 10 Hz) at 0.1 A cm−2 current density. In terms of the noise level, NiOx/β‐Ga2O3 p–n diodes perform excellently for new technology and occupy an intermediate position among devices of various designs implemented with different ultra‐wide‐bandgap semiconductors. The obtained results are important for understanding the electronic properties of NiOx/β‐Ga2O3 heterojunctions and contribute to the development of noise spectroscopy as the quality assessment tool for new electronic materials and device technologies.https://doi.org/10.1002/aelm.2023005011/f noiseflicker noisep–n diodeswide bandgap semiconductors |
| spellingShingle | Subhajit Ghosh Dinusha Herath Mudiyanselage Fariborz Kargar Yuji Zhao Houqiang Fu Alexander A. Balandin Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes Advanced Electronic Materials 1/f noise flicker noise p–n diodes wide bandgap semiconductors |
| title | Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes |
| title_full | Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes |
| title_fullStr | Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes |
| title_full_unstemmed | Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes |
| title_short | Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes |
| title_sort | temperature dependence of low frequency noise characteristics of niox β ga2o3 p n heterojunction diodes |
| topic | 1/f noise flicker noise p–n diodes wide bandgap semiconductors |
| url | https://doi.org/10.1002/aelm.202300501 |
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