Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes

Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes

Abstract Temperature dependence of the low‐frequency electronic noise in NiOx/β‐Ga2O3 p–n heterojunction diodes is reported. The noise spectral density is of the 1/f‐type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is t...

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Bibliographic Details
Main Authors: Subhajit Ghosh, Dinusha Herath Mudiyanselage, Fariborz Kargar, Yuji Zhao, Houqiang Fu, Alexander A. Balandin
Format: Article
Language:English
Published: Wiley-VCH 2024-02-01
Series:Advanced Electronic Materials
Subjects:
1/f noise
flicker noise
p–n diodes
wide bandgap semiconductors
Online Access:https://doi.org/10.1002/aelm.202300501

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