Energy band correction due to one dimension tension in phosphorene
Among graphene-like family, phosphorene is a typical semiconducting layered material, which can also be a superconductor in low temperature. Applying pressure or tension on phosphorene lattice results in changing the hopping terms, which change the energy bands of the material. In this research we u...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Islamic Azad University, Marvdasht Branch
2017-01-01
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| Series: | Journal of Optoelectronical Nanostructures |
| Subjects: | |
| Online Access: | https://jopn.marvdasht.iau.ir/article_2201_2d0714f584f0baf07b508a328f450671.pdf |
| Summary: | Among graphene-like family, phosphorene is a typical semiconducting layered material, which can also be a superconductor in low temperature. Applying pressure or tension on phosphorene lattice results in changing the hopping terms, which change the energy bands of the material. In this research we use the tight-binding Hamiltonian, including relevant hopping terms, to calculate energy bands of normal and under tension phosphorene. Our results show that the energy gap decreases by decreasing / from 3 to 2, and finally the gap disappears. |
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| ISSN: | 2423-7361 2538-2489 |