Innovative Design of Bismuth-Telluride-Based Thermoelectric Transistors
Conventional thermoelectric generators, predominantly based on the π-type structure, are severely limited in their applications due to the relatively low conversion efficiency. In response to the challenge, in this work, a Bi<sub>2</sub>Te<sub>3</sub>-based thermoelectric tra...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-08-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/16/16/5536 |
| _version_ | 1797584053023539200 |
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| author | Hao Deng Bohang Nan Guiying Xu |
| author_facet | Hao Deng Bohang Nan Guiying Xu |
| author_sort | Hao Deng |
| collection | DOAJ |
| description | Conventional thermoelectric generators, predominantly based on the π-type structure, are severely limited in their applications due to the relatively low conversion efficiency. In response to the challenge, in this work, a Bi<sub>2</sub>Te<sub>3</sub>-based thermoelectric transistor driven by laser illumination is demonstrated. Under laser illumination, a temperature difference of 46.7 °C is produced between the two ends of the transistor structure. Further, the hole concentrations in each region redistribute and the built-in voltages decrease due to the temperature difference, leading to the formation of the transistor circuit. Additionally, the operation condition of the thermoelectric transistor is presented. The calculation results demonstrate that the maximum output power of such a designed thermoelectric transistor is 0.7093 μW. |
| first_indexed | 2024-03-10T23:46:45Z |
| format | Article |
| id | doaj.art-add202b228564d6da2344ed0612bfb57 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T23:46:45Z |
| publishDate | 2023-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-add202b228564d6da2344ed0612bfb572023-11-19T01:58:55ZengMDPI AGMaterials1996-19442023-08-011616553610.3390/ma16165536Innovative Design of Bismuth-Telluride-Based Thermoelectric TransistorsHao Deng0Bohang Nan1Guiying Xu2School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, ChinaSchool of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, ChinaSchool of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, ChinaConventional thermoelectric generators, predominantly based on the π-type structure, are severely limited in their applications due to the relatively low conversion efficiency. In response to the challenge, in this work, a Bi<sub>2</sub>Te<sub>3</sub>-based thermoelectric transistor driven by laser illumination is demonstrated. Under laser illumination, a temperature difference of 46.7 °C is produced between the two ends of the transistor structure. Further, the hole concentrations in each region redistribute and the built-in voltages decrease due to the temperature difference, leading to the formation of the transistor circuit. Additionally, the operation condition of the thermoelectric transistor is presented. The calculation results demonstrate that the maximum output power of such a designed thermoelectric transistor is 0.7093 μW.https://www.mdpi.com/1996-1944/16/16/5536Bi<sub>2</sub>Te<sub>3</sub>thermoelectric transistoroutput performancetheoretical calculation |
| spellingShingle | Hao Deng Bohang Nan Guiying Xu Innovative Design of Bismuth-Telluride-Based Thermoelectric Transistors Materials Bi<sub>2</sub>Te<sub>3</sub> thermoelectric transistor output performance theoretical calculation |
| title | Innovative Design of Bismuth-Telluride-Based Thermoelectric Transistors |
| title_full | Innovative Design of Bismuth-Telluride-Based Thermoelectric Transistors |
| title_fullStr | Innovative Design of Bismuth-Telluride-Based Thermoelectric Transistors |
| title_full_unstemmed | Innovative Design of Bismuth-Telluride-Based Thermoelectric Transistors |
| title_short | Innovative Design of Bismuth-Telluride-Based Thermoelectric Transistors |
| title_sort | innovative design of bismuth telluride based thermoelectric transistors |
| topic | Bi<sub>2</sub>Te<sub>3</sub> thermoelectric transistor output performance theoretical calculation |
| url | https://www.mdpi.com/1996-1944/16/16/5536 |
| work_keys_str_mv | AT haodeng innovativedesignofbismuthtelluridebasedthermoelectrictransistors AT bohangnan innovativedesignofbismuthtelluridebasedthermoelectrictransistors AT guiyingxu innovativedesignofbismuthtelluridebasedthermoelectrictransistors |