MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors
The features of the wide band gap SiC semiconductor use in the capacitive MOSFE sensors’ structure in terms of the hydrogen gas sensitivity effect, the response speed, and the measuring signals’ optimal parameters are studied. Sensors in a high-temperature ceramic housing with the Me/Ta<sub>2&...
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| Format: | Article |
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MDPI AG
2023-04-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/23/7/3760 |
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| author | Artur Litvinov Maya Etrekova Boris Podlepetsky Nikolay Samotaev Konstantin Oblov Alexey Afanasyev Vladimir Ilyin |
| author_facet | Artur Litvinov Maya Etrekova Boris Podlepetsky Nikolay Samotaev Konstantin Oblov Alexey Afanasyev Vladimir Ilyin |
| author_sort | Artur Litvinov |
| collection | DOAJ |
| description | The features of the wide band gap SiC semiconductor use in the capacitive MOSFE sensors’ structure in terms of the hydrogen gas sensitivity effect, the response speed, and the measuring signals’ optimal parameters are studied. Sensors in a high-temperature ceramic housing with the Me/Ta<sub>2</sub>O<sub>5</sub>/SiC<sup>n+</sup>/4H-SiC structures and two types of gas-sensitive electrodes were made: Palladium and Platinum. The effectiveness of using Platinum as an alternative to Palladium in the MOSFE-Capacitor (MOSFEC) gas sensors’ high-temperature design is evaluated. It is shown that, compared with Silicon, the use of Silicon Carbide increases the response rate, while maintaining the sensors’ high hydrogen sensitivity. The operating temperature and test signal frequency influence for measuring the sensor’s capacitance on the sensitivity to H<sub>2</sub> have been studied. |
| first_indexed | 2024-03-11T05:24:08Z |
| format | Article |
| id | doaj.art-adf2e5ecfaab4ab8975eefc161b2efb4 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-11T05:24:08Z |
| publishDate | 2023-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-adf2e5ecfaab4ab8975eefc161b2efb42023-11-17T17:37:22ZengMDPI AGSensors1424-82202023-04-01237376010.3390/s23073760MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas SensorsArtur Litvinov0Maya Etrekova1Boris Podlepetsky2Nikolay Samotaev3Konstantin Oblov4Alexey Afanasyev5Vladimir Ilyin6Micro- and Nanoelectronics Department, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe Highway 31, 115409 Moscow, RussiaMicro- and Nanoelectronics Department, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe Highway 31, 115409 Moscow, RussiaMicro- and Nanoelectronics Department, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe Highway 31, 115409 Moscow, RussiaMicro- and Nanoelectronics Department, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe Highway 31, 115409 Moscow, RussiaMicro- and Nanoelectronics Department, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe Highway 31, 115409 Moscow, RussiaEngineering Center of Microtechnology and Diagnostics, St. Petersburg Electrotechnical University (ETU «LETI»), Professora Popova str. 5, 197022 St. Petersburg, RussiaEngineering Center of Microtechnology and Diagnostics, St. Petersburg Electrotechnical University (ETU «LETI»), Professora Popova str. 5, 197022 St. Petersburg, RussiaThe features of the wide band gap SiC semiconductor use in the capacitive MOSFE sensors’ structure in terms of the hydrogen gas sensitivity effect, the response speed, and the measuring signals’ optimal parameters are studied. Sensors in a high-temperature ceramic housing with the Me/Ta<sub>2</sub>O<sub>5</sub>/SiC<sup>n+</sup>/4H-SiC structures and two types of gas-sensitive electrodes were made: Palladium and Platinum. The effectiveness of using Platinum as an alternative to Palladium in the MOSFE-Capacitor (MOSFEC) gas sensors’ high-temperature design is evaluated. It is shown that, compared with Silicon, the use of Silicon Carbide increases the response rate, while maintaining the sensors’ high hydrogen sensitivity. The operating temperature and test signal frequency influence for measuring the sensor’s capacitance on the sensitivity to H<sub>2</sub> have been studied.https://www.mdpi.com/1424-8220/23/7/3760field-effect gas sensorhigh-temperature ceramic packagecapacitance–voltage characteristicpulsed laser depositionsilicon technologygas analysis |
| spellingShingle | Artur Litvinov Maya Etrekova Boris Podlepetsky Nikolay Samotaev Konstantin Oblov Alexey Afanasyev Vladimir Ilyin MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors Sensors field-effect gas sensor high-temperature ceramic package capacitance–voltage characteristic pulsed laser deposition silicon technology gas analysis |
| title | MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors |
| title_full | MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors |
| title_fullStr | MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors |
| title_full_unstemmed | MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors |
| title_short | MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors |
| title_sort | mosfe capacitor silicon carbide based hydrogen gas sensors |
| topic | field-effect gas sensor high-temperature ceramic package capacitance–voltage characteristic pulsed laser deposition silicon technology gas analysis |
| url | https://www.mdpi.com/1424-8220/23/7/3760 |
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