Improved electrical parameter of graphene in Si/SiO2/Al2O3/graphene heterostructure for THz modulation

Improved electrical parameter of graphene in Si/SiO2/Al2O3/graphene heterostructure for THz modulation

We proposed the extraction of necessary electrical parameters of graphene (Gr) on Si/SiO _2 /Gr and Si/SiO _2 /Al _2 O _3 /Gr heterostructure THz modulators using the THz measurement technique. The obtained average THz absorption is 24.5% more on Si/SiO _2 /Al _2 O _3 /Gr as compared to the Gr on Si...

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Bibliographic Details
Main Authors: Abhilasha Chouksey, Mohan Lal, Shivnath Kumar, Prashant Kumar, Radhapiyari Laishram, Anupama Singh, J S Rawat, Neeraj Khare
Format: Article
Language:English
Published: IOP Publishing 2022-01-01
Series:Materials Research Express
Subjects:
graphene
optical pumping
THz modulator
Online Access:https://doi.org/10.1088/2053-1591/ac9e43

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