High-Power Femtosecond Laser Processing of SiC Ceramics with Optimized Material Removal Rate

Silicon carbide (SiC) ceramics are widely used as structural materials for various applications. However, the extraordinarily high hardness, brittleness, low material removal rate, and severe tool wear of these materials significantly impact the performance of conventional mechanical processing tech...

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Main Authors: Jian Zhang, Zhichao Liu, Yuanhang Zhang, Feng Geng, Shengfei Wang, Fei Fan, Qinghua Zhang, Qiao Xu
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/14/10/1960
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author Jian Zhang
Zhichao Liu
Yuanhang Zhang
Feng Geng
Shengfei Wang
Fei Fan
Qinghua Zhang
Qiao Xu
author_facet Jian Zhang
Zhichao Liu
Yuanhang Zhang
Feng Geng
Shengfei Wang
Fei Fan
Qinghua Zhang
Qiao Xu
author_sort Jian Zhang
collection DOAJ
description Silicon carbide (SiC) ceramics are widely used as structural materials for various applications. However, the extraordinarily high hardness, brittleness, low material removal rate, and severe tool wear of these materials significantly impact the performance of conventional mechanical processing techniques. In this study, we investigated the influence of different parameters on the material removal rate, surface quality, and surface oxidation during the laser processing of SiC ceramic samples using a high-repetition-frequency femtosecond laser at a wavelength of 1030 nm. Additionally, an experimental investigation was conducted to analyze the effects of a burst mode on the material removal rate. Our results demonstrate that the surface oxidation, which significantly affects the material removal rate, can be effectively reduced by increasing the laser scanning speed and decreasing the laser scanning pitch. The material removal rate and surface quality are mainly affected by laser fluence. The optimal material removal rate is obtained with a laser fluence of 0.4 J/cm<sup>2</sup> at a pulse width of 470 fs.
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spelling doaj.art-ae42ad247cf44688a31159690592d29f2023-11-19T17:25:25ZengMDPI AGMicromachines2072-666X2023-10-011410196010.3390/mi14101960High-Power Femtosecond Laser Processing of SiC Ceramics with Optimized Material Removal RateJian Zhang0Zhichao Liu1Yuanhang Zhang2Feng Geng3Shengfei Wang4Fei Fan5Qinghua Zhang6Qiao Xu7Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, ChinaLaser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, ChinaLaser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, ChinaLaser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, ChinaLaser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, ChinaLaser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, ChinaLaser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, ChinaLaser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, ChinaSilicon carbide (SiC) ceramics are widely used as structural materials for various applications. However, the extraordinarily high hardness, brittleness, low material removal rate, and severe tool wear of these materials significantly impact the performance of conventional mechanical processing techniques. In this study, we investigated the influence of different parameters on the material removal rate, surface quality, and surface oxidation during the laser processing of SiC ceramic samples using a high-repetition-frequency femtosecond laser at a wavelength of 1030 nm. Additionally, an experimental investigation was conducted to analyze the effects of a burst mode on the material removal rate. Our results demonstrate that the surface oxidation, which significantly affects the material removal rate, can be effectively reduced by increasing the laser scanning speed and decreasing the laser scanning pitch. The material removal rate and surface quality are mainly affected by laser fluence. The optimal material removal rate is obtained with a laser fluence of 0.4 J/cm<sup>2</sup> at a pulse width of 470 fs.https://www.mdpi.com/2072-666X/14/10/1960femtosecond laserSiC ceramicslaser processingmaterial removal ratesurface oxidation
spellingShingle Jian Zhang
Zhichao Liu
Yuanhang Zhang
Feng Geng
Shengfei Wang
Fei Fan
Qinghua Zhang
Qiao Xu
High-Power Femtosecond Laser Processing of SiC Ceramics with Optimized Material Removal Rate
Micromachines
femtosecond laser
SiC ceramics
laser processing
material removal rate
surface oxidation
title High-Power Femtosecond Laser Processing of SiC Ceramics with Optimized Material Removal Rate
title_full High-Power Femtosecond Laser Processing of SiC Ceramics with Optimized Material Removal Rate
title_fullStr High-Power Femtosecond Laser Processing of SiC Ceramics with Optimized Material Removal Rate
title_full_unstemmed High-Power Femtosecond Laser Processing of SiC Ceramics with Optimized Material Removal Rate
title_short High-Power Femtosecond Laser Processing of SiC Ceramics with Optimized Material Removal Rate
title_sort high power femtosecond laser processing of sic ceramics with optimized material removal rate
topic femtosecond laser
SiC ceramics
laser processing
material removal rate
surface oxidation
url https://www.mdpi.com/2072-666X/14/10/1960
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