Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching Equipment
During the oxide layer etching process, particles in capacitively coupled plasma etching equipment adhere to the wafer edge and cause defects that reduce the yield from semiconductor wafers. To reduce edge particle contamination in plasma etching equipment, we propose changes in the voltage and temp...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-06-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/12/11/5684 |
| _version_ | 1797494065561862144 |
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| author | Ching-Ming Ku Stone Cheng |
| author_facet | Ching-Ming Ku Stone Cheng |
| author_sort | Ching-Ming Ku |
| collection | DOAJ |
| description | During the oxide layer etching process, particles in capacitively coupled plasma etching equipment adhere to the wafer edge and cause defects that reduce the yield from semiconductor wafers. To reduce edge particle contamination in plasma etching equipment, we propose changes in the voltage and temperature of the electrostatic chuck, plasma discharge sequence, gas flow, and pressure parameters during the etching process. The proposed edge particle reduction method was developed by analyzing particle maps after wafer etching. Edge particle adherence in plasma etching equipment can be reduced by decreasing the voltage and temperature changes of the electrostatic chuck and generating a plasma sheath with a continuous discharge sequence of radio-frequency plasma. The gas pressure and flow rate also affect the number of wafer edge particles. Experimental results were used to optimize the equipment parameters to reduce edge particle contamination and improve edge wafer defects after dry etching. |
| first_indexed | 2024-03-10T01:28:58Z |
| format | Article |
| id | doaj.art-ae9a595a4d1d4ed28f549b6f017213a6 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-10T01:28:58Z |
| publishDate | 2022-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-ae9a595a4d1d4ed28f549b6f017213a62023-11-23T13:46:07ZengMDPI AGApplied Sciences2076-34172022-06-011211568410.3390/app12115684Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching EquipmentChing-Ming Ku0Stone Cheng1Department of Mechanical Engineering, National Yang Ming Chiao Tung University, Hsinchu City 30010, TaiwanDepartment of Mechanical Engineering, National Yang Ming Chiao Tung University, Hsinchu City 30010, TaiwanDuring the oxide layer etching process, particles in capacitively coupled plasma etching equipment adhere to the wafer edge and cause defects that reduce the yield from semiconductor wafers. To reduce edge particle contamination in plasma etching equipment, we propose changes in the voltage and temperature of the electrostatic chuck, plasma discharge sequence, gas flow, and pressure parameters during the etching process. The proposed edge particle reduction method was developed by analyzing particle maps after wafer etching. Edge particle adherence in plasma etching equipment can be reduced by decreasing the voltage and temperature changes of the electrostatic chuck and generating a plasma sheath with a continuous discharge sequence of radio-frequency plasma. The gas pressure and flow rate also affect the number of wafer edge particles. Experimental results were used to optimize the equipment parameters to reduce edge particle contamination and improve edge wafer defects after dry etching.https://www.mdpi.com/2076-3417/12/11/5684oxide layer etchingedge particleplasma dry etching |
| spellingShingle | Ching-Ming Ku Stone Cheng Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching Equipment Applied Sciences oxide layer etching edge particle plasma dry etching |
| title | Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching Equipment |
| title_full | Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching Equipment |
| title_fullStr | Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching Equipment |
| title_full_unstemmed | Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching Equipment |
| title_short | Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching Equipment |
| title_sort | factor design for the oxide etching process to reduce edge particle contamination in capacitively coupled plasma etching equipment |
| topic | oxide layer etching edge particle plasma dry etching |
| url | https://www.mdpi.com/2076-3417/12/11/5684 |
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