Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics
Abstract For the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leaka...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2020-10-01
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| Series: | European Physical Journal C: Particles and Fields |
| Online Access: | http://link.springer.com/article/10.1140/epjc/s10052-020-08529-z |
| _version_ | 1818340990623154176 |
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| author | S. Bhattarai R. Panth W.-Z. Wei H. Mei D.-M. Mei M.-S. Raut P. Acharya G.-J. Wang |
| author_facet | S. Bhattarai R. Panth W.-Z. Wei H. Mei D.-M. Mei M.-S. Raut P. Acharya G.-J. Wang |
| author_sort | S. Bhattarai |
| collection | DOAJ |
| description | Abstract For the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $$2.13^{-0.05}_{+0.07}\mathrm{{A}}^\circ $$ 2 . 13 + 0.07 - 0.05 A ∘ to $$5.07^{-0.83}_{+2.58}\mathrm{{A}}^\circ $$ 5 . 07 + 2.58 - 0.83 A ∘ , depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches. |
| first_indexed | 2024-12-13T15:51:41Z |
| format | Article |
| id | doaj.art-ae9bad1d82ad440c8a8986e60d4a744a |
| institution | Directory Open Access Journal |
| issn | 1434-6044 1434-6052 |
| language | English |
| last_indexed | 2024-12-13T15:51:41Z |
| publishDate | 2020-10-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | European Physical Journal C: Particles and Fields |
| spelling | doaj.art-ae9bad1d82ad440c8a8986e60d4a744a2022-12-21T23:39:28ZengSpringerOpenEuropean Physical Journal C: Particles and Fields1434-60441434-60522020-10-01801011010.1140/epjc/s10052-020-08529-zInvestigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physicsS. Bhattarai0R. Panth1W.-Z. Wei2H. Mei3D.-M. Mei4M.-S. Raut5P. Acharya6G.-J. Wang7Department of Physics, University of South DakotaDepartment of Physics, University of South DakotaDepartment of Physics, University of South DakotaDepartment of Physics, University of South DakotaDepartment of Physics, University of South DakotaDepartment of Physics, University of South DakotaDepartment of Physics, University of South DakotaDepartment of Physics, University of South DakotaAbstract For the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $$2.13^{-0.05}_{+0.07}\mathrm{{A}}^\circ $$ 2 . 13 + 0.07 - 0.05 A ∘ to $$5.07^{-0.83}_{+2.58}\mathrm{{A}}^\circ $$ 5 . 07 + 2.58 - 0.83 A ∘ , depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.http://link.springer.com/article/10.1140/epjc/s10052-020-08529-z |
| spellingShingle | S. Bhattarai R. Panth W.-Z. Wei H. Mei D.-M. Mei M.-S. Raut P. Acharya G.-J. Wang Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics European Physical Journal C: Particles and Fields |
| title | Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics |
| title_full | Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics |
| title_fullStr | Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics |
| title_full_unstemmed | Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics |
| title_short | Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics |
| title_sort | investigation of the electrical conduction mechanisms in p type amorphous germanium electrical contacts for germanium detectors in searching for rare event physics |
| url | http://link.springer.com/article/10.1140/epjc/s10052-020-08529-z |
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