Determination of the stacking fault density in highly defective single GaAs nanowires by means of coherent diffraction imaging

Determination of the stacking fault density in highly defective single GaAs nanowires by means of coherent diffraction imaging

Coherent x-ray diffraction imaging is used to measure diffraction patterns from individual highly defective nanowires, showing a complex speckle pattern instead of well-defined Bragg peaks. The approach is tested for nanowires of 500 nm diameter and 500 nm height predominately composed by zinc-blend...

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Bibliographic Details
Main Authors: Arman Davtyan, Andreas Biermanns, Otmar Loffeld, Ullrich Pietsch
Format: Article
Language:English
Published: IOP Publishing 2016-01-01
Series:New Journal of Physics
Subjects:
coherent diffraction imaging
phase retrieval
stacking faults
nanowires
Online Access:https://doi.org/10.1088/1367-2630/18/6/063021

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