Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals
Magneto-transport study has been performed in ZrTe _5 single crystals. The observed Shubnikov–de Hass quantum oscillation at low temperature clearly demonstrates the existence of a nontrivial band with small effective mass in ZrTe _5 . Furthermore, we also revealed the highly anisotropic nature of h...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
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IOP Publishing
2019-01-01
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Series: | New Journal of Physics |
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Online Access: | https://doi.org/10.1088/1367-2630/ab3dbb |
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author | L Zhou A Ramiere P B Chen J Y Tang Y H Wu X Lei G P Guo J Q He H T He |
author_facet | L Zhou A Ramiere P B Chen J Y Tang Y H Wu X Lei G P Guo J Q He H T He |
author_sort | L Zhou |
collection | DOAJ |
description | Magneto-transport study has been performed in ZrTe _5 single crystals. The observed Shubnikov–de Hass quantum oscillation at low temperature clearly demonstrates the existence of a nontrivial band with small effective mass in ZrTe _5 . Furthermore, we also revealed the highly anisotropic nature of high-field Landau level splitting in ZrTe _5 , suggesting the dominant role of orbital contribution to the splitting. Besides these, an abnormal large enhancement of magnetoresistance appears at high temperatures, which is believed to arise from the Lifshitz transition induced two-carrier transport in ZrTe _5 . Our study provides more understanding of the physical properties of ZrTe _5 and sheds light on potential application of ZrTe _5 in spintronics. |
first_indexed | 2024-03-12T16:27:45Z |
format | Article |
id | doaj.art-aec9f0fdf0064b408b9d81bb799f138c |
institution | Directory Open Access Journal |
issn | 1367-2630 |
language | English |
last_indexed | 2024-03-12T16:27:45Z |
publishDate | 2019-01-01 |
publisher | IOP Publishing |
record_format | Article |
series | New Journal of Physics |
spelling | doaj.art-aec9f0fdf0064b408b9d81bb799f138c2023-08-08T15:39:40ZengIOP PublishingNew Journal of Physics1367-26302019-01-0121909300910.1088/1367-2630/ab3dbbAnisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystalsL Zhou0A Ramiere1P B Chen2J Y Tang3Y H Wu4X Lei5G P Guo6https://orcid.org/0000-0002-2179-9507J Q He7H T He8Department of Physics, Southern University of Science and Technology , Shenzhen 518055, People’s Republic of ChinaDepartment of Physics, Southern University of Science and Technology , Shenzhen 518055, People’s Republic of ChinaDepartment of Physics, Southern University of Science and Technology , Shenzhen 518055, People’s Republic of ChinaDepartment of Physics, Southern University of Science and Technology , Shenzhen 518055, People’s Republic of ChinaDepartment of Physics, Southern University of Science and Technology , Shenzhen 518055, People’s Republic of ChinaDepartment of Physics, Southern University of Science and Technology , Shenzhen 518055, People’s Republic of ChinaKey Laboratory of Quantum Information, CAS University of Science and Technology of China , Hefei 230026, People’s Republic of ChinaDepartment of Physics, Southern University of Science and Technology , Shenzhen 518055, People’s Republic of ChinaDepartment of Physics, Southern University of Science and Technology , Shenzhen 518055, People’s Republic of ChinaMagneto-transport study has been performed in ZrTe _5 single crystals. The observed Shubnikov–de Hass quantum oscillation at low temperature clearly demonstrates the existence of a nontrivial band with small effective mass in ZrTe _5 . Furthermore, we also revealed the highly anisotropic nature of high-field Landau level splitting in ZrTe _5 , suggesting the dominant role of orbital contribution to the splitting. Besides these, an abnormal large enhancement of magnetoresistance appears at high temperatures, which is believed to arise from the Lifshitz transition induced two-carrier transport in ZrTe _5 . Our study provides more understanding of the physical properties of ZrTe _5 and sheds light on potential application of ZrTe _5 in spintronics.https://doi.org/10.1088/1367-2630/ab3dbbanisotropic landau level splittinglifshitz transitiontwo-carrier transport |
spellingShingle | L Zhou A Ramiere P B Chen J Y Tang Y H Wu X Lei G P Guo J Q He H T He Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals New Journal of Physics anisotropic landau level splitting lifshitz transition two-carrier transport |
title | Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals |
title_full | Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals |
title_fullStr | Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals |
title_full_unstemmed | Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals |
title_short | Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals |
title_sort | anisotropic landau level splitting and lifshitz transition induced magnetoresistance enhancement in zrte5 crystals |
topic | anisotropic landau level splitting lifshitz transition two-carrier transport |
url | https://doi.org/10.1088/1367-2630/ab3dbb |
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