Ultrahigh Vacuum Preparation and Passivation of Abrupt SiO2/Si(111) Interfaces

Ultrahigh Vacuum Preparation and Passivation of Abrupt SiO2/Si(111) Interfaces

Compositionally and structurally abrupt Si/SiO2 interfaces were prepared under ultrahigh vacuum conditions by RF plasma oxidation of Si(111) substrates with thermalized neutral oxygen atoms. The chemical, structural and electronic properties of the interface were analyzed and discussed wit...

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Bibliographic Details
Main Authors:	Bert Stegemann, Daniel Sixtensson, Thomas Lussky, Ulrike Bloeck, Manfred Schmidt
Format:	Article
Language:	deu
Published:	Swiss Chemical Society 2007-12-01
Series:	CHIMIA
Subjects:	Atomic oxygen Density of interface states Hydrogen Nanostructures X-ray photoelectron spectroscopy
Online Access:	https://chimia.ch/chimia/article/view/4417

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