Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation
In this paper, the performance of GaAs and GaSb based sub-10 nm double-gate junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been studied for high-performance switching applications. The quantum transmitting boundary method (QTBM) has been considered for electron t...
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| Format: | Article |
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IEEE
2021-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9517274/ |
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| author | Muhammad Shaffatul Islam Md. Soyaeb Hasan Md. Rafiqul Islam Ahmed Iskanderani Ibrahim M. Mehedi Md. Tanvir Hasan |
| author_facet | Muhammad Shaffatul Islam Md. Soyaeb Hasan Md. Rafiqul Islam Ahmed Iskanderani Ibrahim M. Mehedi Md. Tanvir Hasan |
| author_sort | Muhammad Shaffatul Islam |
| collection | DOAJ |
| description | In this paper, the performance of GaAs and GaSb based sub-10 nm double-gate junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been studied for high-performance switching applications. The quantum transmitting boundary method (QTBM) has been considered for electron transport, and the band structures are accounted for sp3d5s* tight-binding modeling. The channel thickness, t<sub>ch</sub> is varied from 1.7 to 4.7 nm to evaluate the device figure of merits (FOMs). The thinner channel’s device shows a lower OFF-state current, while the ticker channel device allows a higher ON-state current. The threshold voltage is approximately 0.4 V for GaAs DG-JLMOSFETs with t<sub>ch</sub> = 1.7 nm, whereas it reduces to ~0.05 V for that of t<sub>ch</sub> = 4.7 nm. Similar characteristics have been shown in GaSb devices. Besides, a significant impact of t<sub>ch</sub> on the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) is found in GaSb DG-JLMOSFETs compared with those of GaAs devices. The devices show a higher leakage-power dissipation in both channel materials and low-intrinsic delay for thicker t<sub>ch</sub> due to a substantial amount of energy drop. The above results indicate that III-V-based DG-JLMOSFETs are very promising for next-generation high-performance switching technology. |
| first_indexed | 2024-12-19T14:52:54Z |
| format | Article |
| id | doaj.art-aeea17b95e5846a6ad3cf174199462ba |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-19T14:52:54Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-aeea17b95e5846a6ad3cf174199462ba2022-12-21T20:16:47ZengIEEEIEEE Access2169-35362021-01-01911764911765910.1109/ACCESS.2021.31061419517274Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based EvaluationMuhammad Shaffatul Islam0https://orcid.org/0000-0002-3538-2315Md. Soyaeb Hasan1Md. Rafiqul Islam2https://orcid.org/0000-0002-8129-8368Ahmed Iskanderani3Ibrahim M. Mehedi4https://orcid.org/0000-0001-8073-9750Md. Tanvir Hasan5https://orcid.org/0000-0002-6304-3732Department of Electrical and Electronic Engineering (EEE), World University of Bangladesh (WUB), Dhaka, BangladeshDepartment of Electrical, Electronic and Communication Engineering (EECE), Military Institute of Science and Technology, Dhaka, BangladeshDepartment of Electrical and Electronic Engineering (EEE), Khulna University of Engineering & Technology (KUET), Khulna, BangladeshDepartment of Electrical and Computer Engineering (ECE), King Abdulaziz University, Jeddah, Saudi ArabiaDepartment of Electrical and Computer Engineering (ECE), King Abdulaziz University, Jeddah, Saudi ArabiaDepartment of Electrical and Electronic Engineering (EEE), Jashore University of Science and Technology (JUST), Jashore, BangladeshIn this paper, the performance of GaAs and GaSb based sub-10 nm double-gate junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been studied for high-performance switching applications. The quantum transmitting boundary method (QTBM) has been considered for electron transport, and the band structures are accounted for sp3d5s* tight-binding modeling. The channel thickness, t<sub>ch</sub> is varied from 1.7 to 4.7 nm to evaluate the device figure of merits (FOMs). The thinner channel’s device shows a lower OFF-state current, while the ticker channel device allows a higher ON-state current. The threshold voltage is approximately 0.4 V for GaAs DG-JLMOSFETs with t<sub>ch</sub> = 1.7 nm, whereas it reduces to ~0.05 V for that of t<sub>ch</sub> = 4.7 nm. Similar characteristics have been shown in GaSb devices. Besides, a significant impact of t<sub>ch</sub> on the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) is found in GaSb DG-JLMOSFETs compared with those of GaAs devices. The devices show a higher leakage-power dissipation in both channel materials and low-intrinsic delay for thicker t<sub>ch</sub> due to a substantial amount of energy drop. The above results indicate that III-V-based DG-JLMOSFETs are very promising for next-generation high-performance switching technology.https://ieeexplore.ieee.org/document/9517274/GaAsGaSbdouble gatejunctionless MOSFETsnano-scaled deviceshort-channel effects (SCEs) |
| spellingShingle | Muhammad Shaffatul Islam Md. Soyaeb Hasan Md. Rafiqul Islam Ahmed Iskanderani Ibrahim M. Mehedi Md. Tanvir Hasan Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation IEEE Access GaAs GaSb double gate junctionless MOSFETs nano-scaled device short-channel effects (SCEs) |
| title | Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation |
| title_full | Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation |
| title_fullStr | Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation |
| title_full_unstemmed | Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation |
| title_short | Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation |
| title_sort | impact of channel thickness on the performance of gaas and gasb dg jlmosfets an atomistic tight binding based evaluation |
| topic | GaAs GaSb double gate junctionless MOSFETs nano-scaled device short-channel effects (SCEs) |
| url | https://ieeexplore.ieee.org/document/9517274/ |
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